Room temperature terahertz detection based on electron plasma resonance in an Antenna-Coupled GaAs MESFET

Author(s):  
Sangwoo Kim ◽  
Mark S. Sherwin ◽  
Jeramy D. Zimmerman ◽  
Arthur C. Gossard ◽  
Paolo Focardi ◽  
...  
2022 ◽  
Author(s):  
Jie Zhou ◽  
Xueyan Wang ◽  
Zhiqingzi Chen ◽  
Libo Zhang ◽  
Chengyu Yao ◽  
...  

Abstract With the rapid development of terahertz technology, terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging, materials diagnostics, biology and medical sciences, communication. Whereas self-powered, rapid response, and room temperature terahertz photodetectors are confronted with huge challenges. Here, we report a novel rapid response and self-powered terahertz photothermoelectronic (PTE) photodetector based on a low-dimensional material: palladium selenide (PdSe2). An order of magnitude performance enhancement was observed in photodetection based on PdSe2/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect. Under 0.1 THz and 0.3 THz irradiation, the device displays a stable and repeatable photoresponse at room temperature without bias. Furthermore, rapid rise (5.0 μs) and decay (5.4 μs) times are recorded under 0.1 THz irradiation. Our results demonstrate the promising prospect of the detector based on PdSe2 in terms of air-stable, suitable sensitivity, and speed, which may have great application in terahertz detection.


2019 ◽  
Vol 3 (11) ◽  
pp. 977-982 ◽  
Author(s):  
Ning Wang ◽  
Semih Cakmakyapan ◽  
Yen-Ju Lin ◽  
Hamid Javadi ◽  
Mona Jarrahi

2019 ◽  
Vol 125 (15) ◽  
pp. 151602 ◽  
Author(s):  
Ya Zhang ◽  
Suguru Hosono ◽  
Naomi Nagai ◽  
Sang-Hun Song ◽  
Kazuhiko Hirakawa

Nanophotonics ◽  
2022 ◽  
Vol 0 (0) ◽  
Author(s):  
Juan A. Delgado-Notario ◽  
Wojciech Knap ◽  
Vito Clericò ◽  
Juan Salvador-Sánchez ◽  
Jaime Calvo-Gallego ◽  
...  

Abstract Terahertz (THz) waves have revealed a great potential for use in various fields and for a wide range of challenging applications. High-performance detectors are, however, vital for exploitation of THz technology. Graphene plasmonic THz detectors have proven to be promising optoelectronic devices, but improving their performance is still necessary. In this work, an asymmetric-dual-grating-gate graphene-terahertz-field-effect-transistor with a graphite back-gate was fabricated and characterized under illumination of 0.3 THz radiation in the temperature range from 4.5 K up to the room temperature. The device was fabricated as a sub-THz detector using a heterostructure of h-BN/Graphene/h-BN/Graphite to make a transistor with a double asymmetric-grating-top-gate and a continuous graphite back-gate. By biasing the metallic top-gates and the graphite back-gate, abrupt n+n (or p+p) or np (or pn) junctions with different potential barriers are formed along the graphene layer leading to enhancement of the THz rectified signal by about an order of magnitude. The plasmonic rectification for graphene containing np junctions is interpreted as due to the plasmonic electron-hole ratchet mechanism, whereas, for graphene with n+n junctions, rectification is attributed to the differential plasmonic drag effect. This work shows a new way of responsivity enhancement and paves the way towards new record performances of graphene THz nano-photodetectors.


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