UV laser-induced ferroelectric domain structures investigated by piezoresponse force microscopy

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

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Ferroelectric Domain Pattern of Pb(Mg1/3Nb2/3)O3-33%PbTiO3 Measured by Using Piezoresponse Force Microscopy

Journal of the Korean Physical Society ◽

10.3938/jkps.59.2546 ◽

2011 ◽

Vol 59 (3(1)) ◽

pp. 2546-2550 ◽

Cited By ~ 3

Author(s):

Yoon H Jeong ◽

S.-H. Lee ◽

E. J. Lee ◽

I. K. Yang ◽

M. H. Jung ◽

...

Keyword(s):

Piezoresponse Force Microscopy ◽

Ferroelectric Domain ◽

Domain Pattern ◽

Force Microscopy

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Contrast Mechanism Maps for Piezoresponse Force Microscopy

Journal of Materials Research ◽

10.1557/jmr.2002.0138 ◽

2002 ◽

Vol 17 (5) ◽

pp. 936-939 ◽

Cited By ~ 30

Author(s):

Sergei V. Kalinin ◽

Dawn A. Bonnell

Keyword(s):

Piezoresponse Force Microscopy ◽

Radius Of Curvature ◽

Experimental Conditions ◽

Force Microscopy ◽

Indentation Force ◽

Domain Structures ◽

Contrast Mechanism ◽

Local Modification ◽

Tip Radius ◽

Imaging Conditions

Piezoresponse force microscopy (PFM) is one of the most established techniques for the observation and local modification of ferroelectric domain structures on the submicron level. Both electrostatic and electromechanical interactions contribute at the tip-surface junction in a complex manner, which has resulted in multiple controversies in the interpretation of PFM. Here we analyze the influence of experimental conditions such as tip radius of curvature, indentation force, and cantilever stiffness on PFM image contrast. These results are used to construct contrast mechanism maps, which correlate the imaging conditions with the dominant contrast mechanisms. Conditions under which materials properties can be determined quantitatively are elucidated.

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Investigations of ferroelectric polycrystalline bulks and thick films using piezoresponse force microscopy

Proceedings of The Royal Society A Mathematical Physical and Engineering Sciences ◽

10.1098/rspa.2018.0782 ◽

2019 ◽

Vol 475 (2223) ◽

pp. 20180782 ◽

Cited By ~ 1

Author(s):

Hana Uršič ◽

Uroš Prah

Keyword(s):

Domain Walls ◽

Thick Films ◽

Piezoresponse Force Microscopy ◽

Force Microscopy ◽

Domain Structures ◽

Atomic Force ◽

Ferroelectric Domain Structure ◽

Converse Piezoelectric Effect ◽

Non Destructive

In recent years, ferroelectric/piezoelectric polycrystalline bulks and thick films have been extensively studied for different applications, such as sensors, actuators, transducers and caloric devices. In the majority of these applications, the electric field is applied to the working element in order to induce an electromechanical response, which is a complex phenomenon with several origins. Among them is the field-induced movement of domain walls, which is nowadays extensively studied using piezoresponse force microscopy (PFM), a technique derived from atomic force microscopy. PFM is based on the detection of the local converse piezoelectric effect in the sample; it is one of the most frequently applied methods for the characterization of the ferroelectric domain structure due to the simplicity of the sample preparation, its non-destructive nature and its relatively high imaging resolution. In this review, we focus on the PFM analysis of ferroelectric bulk ceramics and thick films. The core of the paper is divided into four sections: (i) introduction; (ii) the preparation of the samples prior to the PFM investigation; (iii) this is followed by reviews of the domain structures in polycrystalline bulks; and (iv) thick films.

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