Three-dimensional ferroelectric domain imaging of epitaxial BiFeO3 thin films using angle-resolved piezoresponse force microscopy

2010 ◽  
Vol 97 (11) ◽  
pp. 112907 ◽  
Author(s):  
Moonkyu Park ◽  
Seungbum Hong ◽  
Jeffrey A. Klug ◽  
Michael J. Bedzyk ◽  
Orlando Auciello ◽  
...  
2012 ◽  
Vol 1477 ◽  
Author(s):  
C. I. Enriquez-Flores ◽  
J. J. Gervacio-Arciniega ◽  
F. J. Flores-Ruiz ◽  
D. Cardona ◽  
E. Camps ◽  
...  

ABSTRACTBismuth iron oxide BFO films were produced by the pulsed laser deposition technique. These films are a mixture of BiFeO3 ferroelectrical and Bi25FeO40 piezoelectrical phases. The ferroelectrical domain structure of these films was studied via contact resonance piezoresponse force microscopy (CR-PFM) and resonance tracking PFM (RT-PFM). The proportions of area of these BFO phases were derived from the PFM images. The ferroelectrical domain size corresponds to the size of the BiFeO3 crystals. The CR-PFM and RT-PFM techniques allowed us to be able to distinguish between the ferroelectric domains and the piezoelectric regions existing in the polycrystalline films.


2012 ◽  
Vol 534 ◽  
pp. 173-177
Author(s):  
Yong Yin ◽  
Li Ming Liu ◽  
Jing Hui Mo

(111) preferred orientated ferroelectric PbZr0.3Ti0.7O3 (PZT) thin films with grain size of 300-500 nm, and root-mean-square (RMS) roughness of 2.927 nm were prepared by using radio frequency magnetron sputtering process. Piezoresponse force microscopy (PFM) has been used to write complex ferroelectric domain patterns using a biased sweeping PFM tip. Subsequent imaging of switched domain patterns was performed. The stabilization of the written domain was investigated by inverse biased tip scanning. The results indicate that these films are suitable for submicron scale domain writing, and the resulted domain are affected by the condition of crystalline boundary. The written domain is superficial and can be easily erased by inverse tip-applied electric field


2013 ◽  
Vol 52 (40) ◽  
pp. 14328-14334 ◽  
Author(s):  
Juan Ramos-Cano ◽  
Mario Miki-Yoshida ◽  
André Marino Gonçalves ◽  
José Antônio Eiras ◽  
Jesús González-Hernández ◽  
...  

Author(s):  
Shunyu Chang ◽  
Yanquan Geng ◽  
Yongda Yan

AbstractAs one of the most widely used nanofabrication methods, the atomic force microscopy (AFM) tip-based nanomachining technique offers important advantages, including nanoscale manipulation accuracy, low maintenance cost, and flexible experimental operation. This technique has been applied to one-, two-, and even three-dimensional nanomachining patterns on thin films made of polymers, metals, and two-dimensional materials. These structures are widely used in the fields of nanooptics, nanoelectronics, data storage, super lubrication, and so forth. Moreover, they are believed to have a wide application in other fields, and their possible industrialization may be realized in the future. In this work, the current state of the research into the use of the AFM tip-based nanomachining method in thin-film machining is presented. First, the state of the structures machined on thin films is reviewed according to the type of thin-film materials (i.e., polymers, metals, and two-dimensional materials). Second, the related applications of tip-based nanomachining to film machining are presented. Finally, the current situation of this area and its potential development direction are discussed. This review is expected to enrich the understanding of the research status of the use of the tip-based nanomachining method in thin-film machining and ultimately broaden its application.


2021 ◽  
Author(s):  
Jing Wang ◽  
Jing Ma ◽  
Houbing Huang ◽  
Ji Ma ◽  
Hasnain Jafri ◽  
...  

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.


2011 ◽  
Vol 59 (3(1)) ◽  
pp. 2546-2550 ◽  
Author(s):  
Yoon H Jeong ◽  
S.-H. Lee ◽  
E. J. Lee ◽  
I. K. Yang ◽  
M. H. Jung ◽  
...  

2005 ◽  
Vol 81 (6) ◽  
pp. 1207-1212 ◽  
Author(s):  
R. Poyato ◽  
M.L. Calzada ◽  
V.V. Shvartsman ◽  
A. Kholkin ◽  
P. Vilarinho ◽  
...  

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