InAlAs/InGaAs(P) double heterojunction bipolar transistors with high breakdown voltage grown by chemical beam epitaxy (CBE)
1993 ◽
Vol 40
(11)
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pp. 2121
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2012 ◽
Vol 33
(1)
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pp. 014004
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1994 ◽
Vol 136
(1-4)
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pp. 221-224
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2019 ◽
Vol 16
(3)
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pp. 20181125-20181125
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2016 ◽
Vol E99.C
(5)
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pp. 522-527
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2009 ◽
Vol 30
(11)
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pp. 1119-1121
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