High-speed, high-breakdown voltage InP/InGaAs double heterojunction bipolar transistors grown by MOMBE

2005 ◽  
Author(s):  
Hin-Fai Chau ◽  
E.A. Beam
Keyword(s):  
Breakdown Voltage ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
High Breakdown Voltage ◽  
Double Heterojunction

High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage

2002 ◽  
Vol 46 (4) ◽  
pp. 581-584 ◽  
Author(s):  
P.C Chang ◽  
C Monier ◽  
A.G Baca ◽  
N.Y Li ◽  
F Newman ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Turn On ◽  
Double Heterojunction

InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

1992 ◽  
Vol 28 (1) ◽  
pp. 85-86 ◽  
Author(s):  
M.L. Parrilla ◽  
D.J. Newson ◽  
J.A. Quayle ◽  
M.D.A. MacBean ◽  
D.J. Skellern
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Driving Capability

scholarly journals InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage

2019 ◽  
Vol 16 (3) ◽  
pp. 20181125-20181125 ◽  
Author(s):  
Takuya Hoshi ◽  
Norihide Kashio ◽  
Yuta Shiratori ◽  
Kenji Kurishima ◽  
Minoru Ida ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction
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