Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz <i>f</i><sub>max</sub> and 5-V Breakdown Voltage

Bipolar Transistors ◽

Type Ii ◽

High-speed, high-breakdown voltage InP/InGaAs double heterojunction bipolar transistors grown by MOMBE

10.1109/drc.1993.1009590 ◽

2005 ◽

Author(s):

Hin-Fai Chau ◽

E.A. Beam

Keyword(s):

Breakdown Voltage ◽

High Speed ◽

Bipolar Transistors ◽

High Breakdown Voltage ◽

High-speed, high breakdown voltage InP/InGaAs double-heterojunction bipolar transistors grown by MOMBE

IEEE Transactions on Electron Devices ◽

10.1109/16.239796 ◽

1993 ◽

Vol 40 (11) ◽

pp. 2121 ◽

Cited By ~ 6

Author(s):

H.-F. Chau ◽

E.A. Beam

Keyword(s):

Breakdown Voltage ◽

High Speed ◽

Bipolar Transistors ◽

High Breakdown Voltage ◽

InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage

IEICE Electronics Express ◽

10.1587/elex.16.20181125 ◽

2019 ◽

Vol 16 (3) ◽

pp. 20181125-20181125 ◽

Cited By ~ 2

Author(s):

Takuya Hoshi ◽

Norihide Kashio ◽

Yuta Shiratori ◽

Kenji Kurishima ◽

Minoru Ida ◽

...

Keyword(s):

Breakdown Voltage ◽

Bipolar Transistors ◽

Kirk effect mechanism in type-II InP∕GaAsSb double heterojunction bipolar transistors

Journal of Applied Physics ◽

10.1063/1.2783764 ◽

2007 ◽

Vol 102 (6) ◽

pp. 064511 ◽

Cited By ~ 4

Author(s):

N. G. Tao ◽

C. R. Bolognesi

Keyword(s):

Bipolar Transistors ◽

Type Ii ◽

Effect Mechanism ◽

Kirk Effect ◽

Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.1131 ◽

2002 ◽

Vol 41 (Part 1, No. 2B) ◽

pp. 1131-1135 ◽

Cited By ~ 32

Author(s):

Colombo R. Bolognesi ◽

Martin W. Dvorak ◽

Noureddine Matine ◽

Oliver J. Pitts ◽

Simon P. Watkins

Keyword(s):

Bipolar Transistors ◽

Type Ii ◽

High breakdown voltage InGaAs/InP double heterojunction bipolar transistors withfmax= 256 GHz and BVCEO= 8.3 V

Journal of Semiconductors ◽

10.1088/1674-4926/33/1/014004 ◽

2012 ◽

Vol 33 (1) ◽

pp. 014004 ◽

Cited By ~ 1

Author(s):

Wei Cheng ◽

Yan Zhao ◽

Hanchao Gao ◽

Chen Chen ◽

Naibin Yang

Keyword(s):

Breakdown Voltage ◽

Bipolar Transistors ◽

High Breakdown Voltage ◽

Two-dimensional simulation of type-II InP/GaAsSb/InP double heterojunction bipolar transistors

physica status solidi (c) ◽

10.1002/pssc.200674269 ◽

2007 ◽

Vol 4 (5) ◽

pp. 1675-1679 ◽

Cited By ~ 1

Author(s):

N. G. M. Tao ◽

H. G. Liu ◽

C. R. Bolognesi

Keyword(s):

Bipolar Transistors ◽

Type Ii ◽

Two Dimensional ◽

Double Heterojunction ◽

Dimensional Simulation

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate

10.1109/bcicts48439.2020.9392903 ◽

2020 ◽

Author(s):

Yuta Shiratori ◽

Takuya Hoshi ◽

Hideaki Matsuzaki

Keyword(s):

High Speed ◽

Bipolar Transistors ◽

Type Ii ◽

Ultra High Speed ◽

Type-II InP/GaAsSb double-heterojunction bipolar transistors withfMAX> 700 GHz

Applied Physics Express ◽

10.7567/apex.7.034105 ◽

2014 ◽

Vol 7 (3) ◽

pp. 034105 ◽

Cited By ~ 18

Author(s):

Ralf Flückiger ◽

Rickard Lövblom ◽

Maria Alexandrova ◽

Olivier Ostinelli ◽

Colombo R. Bolognesi

Keyword(s):

Bipolar Transistors ◽

Type Ii ◽

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

InAlAs/InGaAs(P) double heterojunction bipolar transistors with high breakdown voltage grown by chemical beam epitaxy (CBE)

10.1109/cornel.1993.303069 ◽

2002 ◽

Author(s):

J.C. Cowles ◽

W.L. Chen ◽

G.O. Munns ◽

G.I. Haddad

Keyword(s):

Breakdown Voltage ◽

Bipolar Transistors ◽

Chemical Beam Epitaxy ◽

High Breakdown Voltage ◽