Performance analysis and comparative study of high-K triple metal double gate SON TFET with SOI equivalent

2017 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2017.8073927 ◽

2017 ◽

Author(s):

Tripty Kumari ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Comparative Study ◽

Double Gate ◽

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Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation

Microelectronics Reliability ◽

10.1016/j.microrel.2011.02.004 ◽

2011 ◽

Vol 51 (6) ◽

pp. 1105-1112 ◽

Author(s):

Swagata Bhattacherjee ◽

Abhijit Biswas

Keyword(s):

Performance Analysis ◽

Carrier Concentration ◽

Gate Dielectrics ◽

Double Gate ◽

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Analytical modeling and simulation of workfunction engineered gate junctionless high-k dielectric double gate Mosfet: a comparative study

Michael Faraday IET International Summit 2015 ◽

10.1049/cp.2015.1670 ◽

2015 ◽

Author(s):

S. Sarkhel ◽

S.K. Sarkar ◽

N. Bagga

Keyword(s):

Comparative Study ◽

Modeling And Simulation ◽

Analytical Modeling ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

High K Dielectric

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Comparative Study of Single and Double Gate All Around Cylindrical FET Structures for High-K Dielectric Materials

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00258-0 ◽

2020 ◽

Author(s):

Rajveer Kaur ◽

Balwinder Singh

Keyword(s):

Comparative Study ◽

Dielectric Materials ◽

Double Gate ◽

High K ◽

High K Dielectric

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Performance analysis of nanoscale double gate strained silicon MOSFET with high k dielectric layers

Materials Research Express ◽

10.1088/2053-1591/ab1fca ◽

2019 ◽

Vol 6 (8) ◽

pp. 085062 ◽

Author(s):

G Thriveni ◽

Kaustab Ghosh

Keyword(s):

Performance Analysis ◽

Strained Silicon ◽

Double Gate ◽

Dielectric Layers ◽

High K ◽

High K Dielectric

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Performance Analysis of High- $k$ Dielectric Based Double-gate Carbon Nanotube MOSFET

2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) ◽

10.1109/piers-spring46901.2019.9017411 ◽

2019 ◽

Author(s):

Shashi K. Dargar ◽

Viranjay M. Srivastava

Keyword(s):

Carbon Nanotube ◽

Performance Analysis ◽

Double Gate ◽

High K ◽

High K Dielectric

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Performance analysis and improvement of nanoscale double gate Junctionless transistor based inverter using high-K gate dielectrics

TENCON 2015 - 2015 IEEE Region 10 Conference ◽

10.1109/tencon.2015.7373040 ◽

2015 ◽

Author(s):

Achinta Baidya ◽

T. R. Lenka ◽

S. Baishya

Keyword(s):

Performance Analysis ◽

Gate Dielectrics ◽

Double Gate ◽

High K ◽

Junctionless Transistor

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The impact of high-k gate dielectric on Junctionless Vertical Double Gate MOSFET

International Journal of Computer Sciences and Engineering ◽

10.26438/ijcse/v6i6.14751478 ◽

2018 ◽

Vol 6 (6) ◽

pp. 1475-1478

Author(s):

Jagdeep Rahul

Keyword(s):

Gate Dielectric ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

High K Gate Dielectric

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Design and Performance Analysis of Proposed Biosensor based on Double Gate Junctionless Transistor

Silicon ◽

10.1007/s12633-021-01335-6 ◽

2021 ◽

Author(s):

Pawandeep Kaur ◽

Avtar Singh Buttar ◽

Balwinder Raj

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Junctionless Transistor ◽

And Performance

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Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers

2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3) ◽

10.1109/iconc345789.2020.9117425 ◽

2020 ◽

Author(s):

Gaurav Dhiman ◽

Rajeev Pourush

Keyword(s):

Work Function ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

Gate Work Function

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A Comparative Study of various High-K Dielectric Materials as Gate Oxide Layer on TG FinFET

10.1109/gcat52182.2021.9587772 ◽

2021 ◽

Author(s):

Arunita Mukherjee ◽

Rajendra Kumar Nagaria

Keyword(s):

Comparative Study ◽

Oxide Layer ◽

Dielectric Materials ◽

High K ◽

High K Dielectric

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