Yield-reliability modeling for fault tolerant integrated circuits

2002 ◽  
Author(s):  
T.S. Barnett ◽  
A.D. Singh ◽  
V.P. Nelson
Keyword(s):  
Integrated Circuits ◽  
Fault Tolerant ◽  
Reliability Modeling

On reliability modeling of closed fault-tolerant computer systems

1990 ◽  
Vol 39 (4) ◽  
pp. 571-575 ◽  
Author(s):  
M. Balakrishnan ◽  
C.S. Raghavendra
Keyword(s):  
Fault Tolerant ◽  
Computer Systems ◽  
Reliability Modeling

scholarly journals Reliability Modeling of Fault Tolerant Control Systems

2007 ◽  
Vol 17 (4) ◽  
pp. 491-504 ◽  
Author(s):  
Hongbin LI ◽  
Qing Zhao ◽  
Zhenyu Yang
Keyword(s):  
Markov Process ◽  
Control Systems ◽  
Reliability Index ◽  
Process Model ◽  
Fault Tolerant ◽  
Fault Tolerant Control ◽  
Reliability Evaluation ◽  
Reliability Modeling ◽  
Semi Markov Process ◽  
Hard Deadline

Reliability Modeling of Fault Tolerant Control SystemsThis paper proposes a novel approach to reliability evaluation for active Fault Tolerant Control Systems (FTCSs). By introducing a reliability index based on the control performance and hard deadline, a semi-Markov process model is proposed to describe system operation for reliability evaluation. The degraded performance of FTCSs in the presence of imperfect Fault Detection and Isolation (FDI) is reflected by semi-Markov states. The semi-Markov kernel, the key parameter of the process, is determined by four probabilistic parameters based on the Markovian model of FTCSs. Computed from the transition probabilities of the semi-Markov process, the reliability index incorporates control objectives, hard deadline, and the effects of imperfect FDI, a suitable quantitative measure of the overall performance.

Issues in Reliability Modeling of Fault-Tolerant Computers

1984 ◽  
pp. 228-239
Author(s):  
Kishor Trivedi ◽  
Joanne Bechta Dugan ◽  
Robert Geist ◽  
Mark Smotherman
Keyword(s):  
Fault Tolerant ◽  
Reliability Modeling

Modelling of ionization effects and the effects of displacement in digital chips for CAD

10.12737/8491 ◽  
2015 ◽  
Vol 4 (4) ◽  
pp. 280-290 ◽  
Author(s):  
Ачкасов ◽  
V. Achkasov ◽  
Чевычелов ◽  
Yu. Chevychelov ◽  
Анциферова ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Dose Rate ◽  
Fault Tolerant ◽  
Neutron Radiation ◽  
Operating Mode ◽  
Neutron Pulse ◽  
X Ray ◽  
Ionization Current ◽  
Collector Junction ◽  
The Impact

The methods of design of digital fault-tolerant bipolar integrated circuits to exposure to radiations such as gamma, x-ray and neutron radiation are considered, as well as the impact of the neutron pulse, which af-fect largely on the gain of the transistor. The operating mode of integrated circuits with change in the ini-tial values of voltages, as well as currents of the emitter and of the base is presented. Numerical calcula-tions of the ionization current in the base-collector junction are considered which allow pre-calculate dose rate of gamma, x-ray and neutron radiation.

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