High-Speed InP-Based double heterojunction bipolar transistors and varactors for three-dimensional terahertz computed tomography

2017 ◽  
Author(s):  
Dominique Coquillat ◽  
Virginie Nodjiadjim ◽  
Alexandre Duhant ◽  
Meriam Triki ◽  
Olivier Strauss ◽  
...  
Keyword(s):  
Computed Tomography ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Three Dimensional ◽  
Bipolar Transistors ◽  
Double Heterojunction

scholarly journals InP double heterojunction bipolar transistors for terahertz computed tomography

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085320
Author(s):  
Dominique Coquillat ◽  
Alexandre Duhant ◽  
Meriam Triki ◽  
Virginie Nodjiadjim ◽  
Agnieszka Konczykowska ◽  
...  
Keyword(s):  
Computed Tomography ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction

High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage

2002 ◽  
Vol 46 (4) ◽  
pp. 581-584 ◽  
Author(s):  
P.C Chang ◽  
C Monier ◽  
A.G Baca ◽  
N.Y Li ◽  
F Newman ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Turn On ◽  
Double Heterojunction

InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

1992 ◽  
Vol 28 (1) ◽  
pp. 85-86 ◽  
Author(s):  
M.L. Parrilla ◽  
D.J. Newson ◽  
J.A. Quayle ◽  
M.D.A. MacBean ◽  
D.J. Skellern
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Driving Capability

High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors

2016 ◽  
Vol 25 (03n04) ◽  
pp. 1640011 ◽  
Author(s):  
D. Coquillat ◽  
V. Nodjiadjim ◽  
S. Blin ◽  
A. Konczykowska ◽  
N. Dyakonova ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Room Temperature ◽  
High Sensitivity ◽  
Low Noise ◽  
Bipolar Transistors ◽  
Low Noise Amplifiers ◽  
Modulation Bandwidth ◽  
Terahertz Detection ◽  
Double Heterojunction

Compact and fast detectors, for imaging and wireless communication applications, require efficient rectification of electromagnetic radiation with frequencies approaching 1 THz and modulation bandwidth up to a few tens of GHz. This can be obtained only by using a mature technology allowing monolithic integration of detectors with low-noise amplifiers. One of the best candidates is indium phosphide bipolar transistor (InP HBT) technology. In this work, we report on room temperature high sensitivity terahertz detection by InP double-heterojunction bipolar transistors (DHBTs) operating in a large frequency range (0.25–3.1 THz). The performances of the DHBTs as terahertz sensors for communications were evaluated showing the modulation bandwidth of investigated DHBTs close to 10 GHz.

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