High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a step-graded base-collector heterojunction

1995 ◽  
Vol 16 (11) ◽  
pp. 479-481 ◽  
Author(s):  
B. Willen ◽  
U. Westergren ◽  
H. Asonen
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Gain ◽  
Bipolar Transistors ◽  
Double Heterojunction

High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage

2002 ◽  
Vol 46 (4) ◽  
pp. 581-584 ◽  
Author(s):  
P.C Chang ◽  
C Monier ◽  
A.G Baca ◽  
N.Y Li ◽  
F Newman ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Turn On ◽  
Double Heterojunction

InP/InGaAs double-heterojunction bipolar transistors with high speed, gain and current-driving capability

1992 ◽  
Vol 28 (1) ◽  
pp. 85-86 ◽  
Author(s):  
M.L. Parrilla ◽  
D.J. Newson ◽  
J.A. Quayle ◽  
M.D.A. MacBean ◽  
D.J. Skellern
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Driving Capability

High-gain, high-speed InGaAs/InP heterojunction bipolar transistors

2002 ◽  
Author(s):  
C.S. Kyono ◽  
P. Cheung ◽  
C.J. Pinzone ◽  
N.D. Gerrard ◽  
T. Bustami ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Gain ◽  
Bipolar Transistors

High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors

2016 ◽  
Vol 25 (03n04) ◽  
pp. 1640011 ◽  
Author(s):  
D. Coquillat ◽  
V. Nodjiadjim ◽  
S. Blin ◽  
A. Konczykowska ◽  
N. Dyakonova ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Room Temperature ◽  
High Sensitivity ◽  
Low Noise ◽  
Bipolar Transistors ◽  
Low Noise Amplifiers ◽  
Modulation Bandwidth ◽  
Terahertz Detection ◽  
Double Heterojunction

Compact and fast detectors, for imaging and wireless communication applications, require efficient rectification of electromagnetic radiation with frequencies approaching 1 THz and modulation bandwidth up to a few tens of GHz. This can be obtained only by using a mature technology allowing monolithic integration of detectors with low-noise amplifiers. One of the best candidates is indium phosphide bipolar transistor (InP HBT) technology. In this work, we report on room temperature high sensitivity terahertz detection by InP double-heterojunction bipolar transistors (DHBTs) operating in a large frequency range (0.25–3.1 THz). The performances of the DHBTs as terahertz sensors for communications were evaluated showing the modulation bandwidth of investigated DHBTs close to 10 GHz.

TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR

2004 ◽  
Vol 14 (03) ◽  
pp. 640-645
Author(s):  
QINGMIN LIU ◽  
SURAJIT SUTAR ◽  
ALAN SEABAUGH
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Tunnel Diode ◽  
Direct Digital Synthesis ◽  
Circuit Topology ◽  
Performance Improvements ◽  
Tunneling Diodes ◽  
Double Heterojunction ◽  
Digital Synthesis

A new tunnel diode/transistor circuit topology is reported, which both increases speed and reduces power in differential comparators. This circuit topology is of special interest for use in direct digital synthesis applications. The circuit topology can be extended to provide performance improvements in high speed logic and signal processing applications. The circuits are designed based on InP/GaAsSb double heterojunction bipolar transistors and AlAs/InGaAs/AlAs resonant tunneling diodes. A self-aligned and scalable fabrication approach using nitride sidewalls and chemical mechanical polishing is outlined.

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