Multilayer silicon nitride-on-silicon photonic platforms for three-dimensional integrated photonic devices and circuits

Author(s):  
Joyce K. S. Poon ◽  
Wesley D. Sacher
Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 215-228 ◽  
Author(s):  
Po Dong ◽  
Young-Kai Chen ◽  
Guang-Hua Duan ◽  
David T. Neilson

AbstractSilicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review high-performance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitride-assisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.


2021 ◽  
pp. 2000501
Author(s):  
Jorge Parra ◽  
Irene Olivares ◽  
Antoine Brimont ◽  
Pablo Sanchis

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 329-341 ◽  
Author(s):  
Raji Shankar ◽  
Marko Lončar

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.


2012 ◽  
Vol 20 (18) ◽  
pp. 20564 ◽  
Author(s):  
Li Fan ◽  
Leo T. Varghese ◽  
Yi Xuan ◽  
Jian Wang ◽  
Ben Niu ◽  
...  

2007 ◽  
Vol 2 (1) ◽  
pp. 52-56 ◽  
Author(s):  
Stephanie A. Rinne ◽  
Florencio García-Santamaría ◽  
Paul V. Braun

2001 ◽  
pp. 1112-1115
Author(s):  
Shinya Sugimoto ◽  
Shuji Tanaka ◽  
Jing-Feng Li ◽  
Takashi Genda ◽  
Ryuzo Watanabe ◽  
...  

Author(s):  
Robert Halir ◽  
Jose Manuel Luque-González ◽  
Alejandro Sánchez-Postigo ◽  
Carlos Pérez-Armenta ◽  
Pablo Ginel-Moreno ◽  
...  

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