Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy

2018 ◽  
Author(s):  
C. Skierbiszewski ◽  
H. Turski ◽  
M. Zak ◽  
K. Nowakowski-Szkudlarek ◽  
G. Muziol ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Tunnel Junctions ◽  
Laser Diodes ◽  
Light Emitting

InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy

2005 ◽  
Vol 278 (1-4) ◽  
pp. 361-366 ◽  
Author(s):  
S.E. Hooper ◽  
M. Kauer ◽  
V. Bousquet ◽  
K. Johnson ◽  
C. Zellweger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Laser Diodes ◽  
High Brightness ◽  
Light Emitting

scholarly journals Blue (In,Ga)N light-emitting diodes with buried n +–p + tunnel junctions by plasma-assisted molecular beam epitaxy

2019 ◽  
Vol 58 (6) ◽  
pp. 060914 ◽  
Author(s):  
YongJin Cho ◽  
Shyam Bharadwaj ◽  
Zongyang Hu ◽  
Kazuki Nomoto ◽  
Uwe Jahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Tunnel Junctions ◽  
Light Emitting

scholarly journals In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gas Sensors ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Porous Structures ◽  
Light Emitting ◽  
Photochemical Etching ◽  
Recent Advances ◽  
Low Dimensional

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

High-power InGaN light emitting diodes grown by molecular beam epitaxy

2004 ◽  
Vol 40 (20) ◽  
pp. 1299 ◽  
Author(s):  
K. Johnson ◽  
V. Bousquet ◽  
S.E. Hooper ◽  
M. Kauer ◽  
C. Zellweger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Power ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting
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