Switching devices based on wide band gap materials as SiC oer a signicant perfor-
mance improvement on the switch level compared to Si devices. A well known example are SiC
diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor-
mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new
SiC devices is evaluated based on analytical optimisation procedures and prototype systems.
There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.
Multi Port Single Stage Power Electronics Converter and Wind PFC Converter for DC Micro Grid Applications
