Effects of silicon substrate coupling phenomena on signal integrity for RF or high speed communications in 3D-IC

Author(s):  
E. Eid ◽  
T. Lacrevaz ◽  
G. Houzet ◽  
C. Bermond ◽  
B. Flechet ◽  
...  
Author(s):  
Hyunsuk Lee ◽  
Heegon Kim ◽  
Sumin Choi ◽  
Dong-Hyun Kim ◽  
Kyungjun Cho ◽  
...  
Keyword(s):  

2021 ◽  
Vol 16 (5) ◽  
pp. 773-780
Author(s):  
Bing-Jie Li ◽  
Zhen-Song Li ◽  
Yan-Ping Zhao ◽  
Zheng-Wang Li ◽  
Min Miao

The signal integrity (SI) analysis of a high-speed signal interconnect channel composed of through silicon vias (TSVs) and horizontal re-distribution layers (RDL) is carried out, and the problems of SI, such as transmission loss, crosstalk and coupling effect in the transmission channel, are analyzed and studied. These signal integrity issues are considered in this paper, a signal interconnect channel model is proposed and the equivalent circuit model is deduced as well. Compared with the traditional one, this interconnect channel model has better performance in SI. Further sweep frequency analysis is carried out for different material parameters to achieve signal transmission performance optimization aimed at this model. Test samples of the proposed signal interconnect channel model are designed and fabricated according to the process index, and measured to verify the actual transmission performance. The design and optimization rule of high-speed signal interconnect channel are summarized which proved that the proposed structure has more advantages in signal transmission performance, and has important guiding significance for practical design.


2004 ◽  
Vol 27 (4) ◽  
pp. 611-629 ◽  
Author(s):  
E. Matoglu ◽  
N. Pham ◽  
D.N. deAraujo ◽  
M. Cases ◽  
M. Swaminathan

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