Degradation of the doping profile of epitaxial GaAs layers due to an ion implantation process

1980 ◽  
Vol 1 (6) ◽  
pp. 112-114 ◽  
Author(s):  
T. Tsuji ◽  
F. Hasegawa
Keyword(s):  
Ion Implantation ◽  
Doping Profile ◽  
Epitaxial Gaas ◽  
Implantation Process

Synthesis of Iron Oxynitride by Nitrogen Ion Implantation of Iron Oxide

1988 ◽  
Vol 100 ◽  
Author(s):  
S. B. Ogale ◽  
Seema Teli ◽  
Sunita Chopda ◽  
D. M. Phase ◽  
S. M. Kanetkar
Keyword(s):  
Iron Oxide ◽  
Ion Implantation ◽  
Conversion Electron ◽  
Mossbauer Spectroscopy ◽  
Nitrogen Implantation ◽  
Nitrogen Ion Implantation ◽  
Conversion Electron Mössbauer Spectroscopy ◽  
Conversion Electron Mossbauer Spectroscopy ◽  
Implantation Process ◽  
Nitrogen Ion

ABSTRACTThe effect of N2+ ion implantation in ∝-Fe2O3 has been investigated by means of Conversion Electron Mossbauer Spectroscopy (CEMS). It Is shown that at a dose value of 1×1017 ions/cm2 and 3×1017 Ions/cm2 the samples exhibit new Interesting hyperfine features which can not be ascribed to known oxide or nitride phases. It Is thus concluded that Iron Oxynitrlde Is formed by the nitrogen Implantation process.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

Fabrication of 1.2 kV Ni/4H-SiC Junction Barrier-Controlled Schottky Diodes with a Single P+ Ion-Implantation Process

2009 ◽  
Vol 54 (5(1)) ◽  
pp. 1802-1806 ◽  
Author(s):  
Sung-Jae Joo ◽  
In-Ho Kang ◽  
Wook Bahng ◽  
Sang Cheol Kim ◽  
Nam-Kyun Kim
Keyword(s):  
Ion Implantation ◽  
Schottky Diodes ◽  
Implantation Process

Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGD02 ◽  
Author(s):  
Ryo Tanaka ◽  
Shinya Takashima ◽  
Katsunori Ueno ◽  
Hideaki Matsuyama ◽  
Masaharu Edo
Keyword(s):  
Ion Implantation ◽  
Implantation Process

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

2007 ◽  
pp. 271-274
Author(s):  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
M. Nagano ◽  
L. Storasta ◽  
Toshiyuki Miyanagi
Keyword(s):  
Ion Implantation ◽  
Implantation Process
Sign in / Sign up

Export Citation Format

Share Document