Extremely low-threshold continue-wave operation of InGaAs quantum-well lasers with an AlAs native-oxide layer grown by MOCVD

2007 ◽  
Author(s):  
Yan-Kuin Su ◽  
Jen-Chieh Chang ◽  
Wei-Cheng Chen ◽  
Hsin-Chieh Yu
Keyword(s):  
Quantum Well ◽  
Oxide Layer ◽  
Quantum Well Lasers ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Low Threshold ◽  
Ingaas Quantum Well

Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio

2002 ◽  
Vol 80 (14) ◽  
pp. 2445-2447 ◽  
Author(s):  
T. Takeuchi ◽  
Y.-L. Chang ◽  
A. Tandon ◽  
D. Bour ◽  
S. Corzine ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Low Threshold ◽  
Ingaas Quantum Well

Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers

1991 ◽  
Vol 58 (16) ◽  
pp. 1765-1767 ◽  
Author(s):  
F. A. Kish ◽  
S. J. Caracci ◽  
N. Holonyak ◽  
J. M. Dallesasse ◽  
G. E. Höfler ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Native Oxide ◽  
Buried Heterostructure ◽  
Low Threshold

Wettability in pressure infiltration of SiC and oxidized SiC particle compacts by molten Al and Al-12wt%Si alloy

2007 ◽  
Vol 22 (8) ◽  
pp. 2273-2278 ◽  
Author(s):  
J.M. Molina ◽  
J. Tian ◽  
C. Garcia-Cordovilla ◽  
E. Louis ◽  
J. Narciso
Keyword(s):  
Contact Angle ◽  
Oxide Layer ◽  
Low Temperatures ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Threshold Pressure ◽  
Pressure Infiltration ◽  
Surface Conditions ◽  
Infiltration Behavior ◽  
Sic Particle

The infiltration behavior of compacts of SiC particles in two surface conditions, as-received and thermally oxidized, was investigated by using pure Al and Al-12wt%Si as infiltrating metals. Analysis of the threshold pressure for infiltration revealed that the process is governed by the same contact angle for all different systems, no matter the metal or particle condition. This leads to the conclusion that oxidation does not modify the wetting characteristics of the particles, most probably because they are already covered by a thin native oxide layer that remains unaltered in processing routes involving short contact times and low temperatures, such as actual conditions of pressure infiltration at 700 °C.

Low threshold buried‐heterostructure quantum well lasers by excimer laser assisted disordering

1988 ◽  
Vol 53 (16) ◽  
pp. 1459-1461 ◽  
Author(s):  
J. E. Epler ◽  
R. L. Thornton ◽  
W. J. Mosby ◽  
T. L. Paoli
Keyword(s):  
Quantum Well ◽  
Excimer Laser ◽  
Quantum Well Lasers ◽  
Buried Heterostructure ◽  
Low Threshold
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