Impedance Spectroscopy and Evolution of the Equivalent Electrical Circuit Model for Large Area Organic Light Emitting Diodes Aged Under Stress

Author(s):  
Alaa Alchaddoud ◽  
Ghassan Ibrahem ◽  
Laurent Canale ◽  
Georges Zissis
2013 ◽  
Vol 14 (8) ◽  
pp. 1939-1945 ◽  
Author(s):  
Philipp Schwamb ◽  
Thilo C.G. Reusch ◽  
Christoph J. Brabec

2021 ◽  
Vol 314 ◽  
pp. 3-8
Author(s):  
Noel Giebink

Organic optoelectronic devices such as light-emitting diodes and solar cells present unique challenges for surface cleaning and preparation because of their large area and the ‘soft’, thin film nature of the materials involved. This paper gives an introduction to this class of semiconductor devices and covers a recent example of how surface cleaning impacts the long-term reliability of organic light-emitting diodes being commercialized for solid-state lighting.


2012 ◽  
Author(s):  
Jaehyun Moon ◽  
Joohyun Hwang ◽  
Hong Kyw Choi ◽  
Taek Yong Kim ◽  
Sung-Yool Choi ◽  
...  

2014 ◽  
Vol 2 (48) ◽  
pp. 10403-10408 ◽  
Author(s):  
Lei Ding ◽  
Yan-Qiu Sun ◽  
Hua Chen ◽  
Feng-Shuo Zu ◽  
Zhao-Kui Wang ◽  
...  

An intermediate connector is developed for fabricating tandem white organic light-emitting diodes.


2016 ◽  
Vol 16 (4) ◽  
pp. 3368-3372 ◽  
Author(s):  
Shuri Sato ◽  
Masashi Takata ◽  
Makoto Takada ◽  
Hiroyoshi Naito

The degradation of bilayer organic light-emitting diodes (OLEDs) with a device structure of N, N′-di(1-naphthyl)-N, N′-diphenylbenzidine (α-NPD) (hole transport layer) and tris-(8-hydroxyquinolate)aluminum (Alq3) (emissive layer and electron transport layer) has been studied by impedance spectroscopy and device simulation. Two modulus peaks are found in the modulus spectra of the OLEDs below the electroluminescence threshold. After aging of the OLEDs, the intensity of electroluminescence is degraded and the modulus peak due to the Alq3 layer is shifted to lower frequency, indicating that the resistance of the Alq3 layer is increased. Device simulation reveals that the increase in the resistance of the Alq3 layer is due to the decrease in the electron mobility in the Alq3 layer.


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