Low complexity RF-MEMS switch optimized for operation up to 120°C

Author(s):  
A. Stehle ◽  
C. Siegel ◽  
V. Ziegler ◽  
B. Schonlinner ◽  
U. Prechtel ◽  
...  
Author(s):  
A. Stehle ◽  
C. Siegel ◽  
V. Ziegler ◽  
B. Schonlinner ◽  
U. Prechtel ◽  
...  

2011 ◽  
Vol 3 (5) ◽  
pp. 499-508 ◽  
Author(s):  
Bernhard Schoenlinner ◽  
Armin Stehle ◽  
Christian Siegel ◽  
William Gautier ◽  
Benedikt Schulte ◽  
...  

This paper gives an overview of the low-complexity radio frequency microelectromechanical systems (RF MEMS) switch concept and technology of EADS Innovation Works in Germany. Starting in 2003, a capacitive switch concept, which is unique in several aspects, was developed to address specific needs in the aeronautic and space. Thermally grown silicon oxide as dielectric layer, the silicon substrate as actuation electrode, and a conductive zone realized by ion implantation make the EADS RF MEMS switch a very simple, low-cost, and reliable approach. In this document, data on experimental investigations are presented, which demonstrate outstanding performance figures in terms of insertion loss, isolation, frequency range, bandwidth, RF-power handling, and robustness with respect to thermal load. Based on this concept, numerous different circuits in particular single-pole single-throws (SPSTs), single-pole multi-throws (SPMTs), tunable filters, phase shifters, and electronically steerable antennas between 6 and 100 GHz have been designed, fabricated, and characterized.


2007 ◽  
Vol 43 (24) ◽  
pp. 1367 ◽  
Author(s):  
A. Stehle ◽  
C. Siegel ◽  
V. Ziegler ◽  
B. Schönlinner ◽  
U. Prechtel ◽  
...  

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.


Author(s):  
Mehrdad Khodapanahandeh ◽  
Akbar Babaeihaselghobi ◽  
Habib Badri Ghavifekr

Author(s):  
K. Srinivasa Rao ◽  
Ch. Gopi Chand ◽  
Reshmi Maity ◽  
N. P. Maity ◽  
K. Girija Sravani

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