The low-complexity RF MEMS switch at EADS: an overview

2011 ◽  
Vol 3 (5) ◽  
pp. 499-508 ◽  
Author(s):  
Bernhard Schoenlinner ◽  
Armin Stehle ◽  
Christian Siegel ◽  
William Gautier ◽  
Benedikt Schulte ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Rf Mems ◽  
Low Cost ◽  
Low Complexity ◽  
Phase Shifters ◽  
Experimental Investigations ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

This paper gives an overview of the low-complexity radio frequency microelectromechanical systems (RF MEMS) switch concept and technology of EADS Innovation Works in Germany. Starting in 2003, a capacitive switch concept, which is unique in several aspects, was developed to address specific needs in the aeronautic and space. Thermally grown silicon oxide as dielectric layer, the silicon substrate as actuation electrode, and a conductive zone realized by ion implantation make the EADS RF MEMS switch a very simple, low-cost, and reliable approach. In this document, data on experimental investigations are presented, which demonstrate outstanding performance figures in terms of insertion loss, isolation, frequency range, bandwidth, RF-power handling, and robustness with respect to thermal load. Based on this concept, numerous different circuits in particular single-pole single-throws (SPSTs), single-pole multi-throws (SPMTs), tunable filters, phase shifters, and electronically steerable antennas between 6 and 100 GHz have been designed, fabricated, and characterized.

RF-MEMS Components and Networks for High-Performance Reconfigurable Telecommunication and Wireless Systems

2012 ◽  
Vol 81 ◽  
pp. 65-74 ◽  
Author(s):  
Jacopo Iannacci ◽  
Giuseppe Resta ◽  
Paola Farinelli ◽  
Roberto Sorrentino
Keyword(s):  
High Performance ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Cost ◽  
Impedance Matching ◽  
Phase Shifters ◽  
Rf Systems ◽  
Mems Technology ◽  
And Performance ◽  
Rf Performance

MEMS (MicroElectroMechanical-Systems) technology applied to the field of Radio Frequency systems (i.e. RF-MEMS) has emerged in the last 10-15 years as a valuable and viable solution to manufacture low-cost and very high-performance passive components, like variable capacitors, inductors and micro-relays, as well as complex networks, like tunable filters, reconfigurable impedance matching networks and phase shifters, and so on. The availability of such components and their integration within RF systems (e.g. radio transceivers, radars, satellites, etc.) enables boosting the characteristics and performance of telecommunication systems, addressing for instance a significant increase of their reconfigurability. The benefits resulting from the employment of RF-MEMS technology are paramount, being some of them the reduction of hardware redundancy and power consumption, along with the operability of the same RF system according to multiple standards. After framing more in detail the whole context of RF MEMS technology, this paper will provide a brief introduction on a typical RF-MEMS technology platform. Subsequently, some relevant examples of lumped RF MEMS passive elements and complex reconfigurable networks will be reported along with their measured RF performance and characteristics.

Low complexity RF-MEMS switch optimized for operation up to 120°C

2007 ◽  
Author(s):  
A. Stehle ◽  
C. Siegel ◽  
V. Ziegler ◽  
B. Schonlinner ◽  
U. Prechtel ◽  
...  
Keyword(s):  
Rf Mems ◽  
Low Complexity ◽  
Rf Mems Switch ◽  
Mems Switch

Low complexity RF-MEMS switch optimized for operation up to 120°C

2007 ◽  
Author(s):  
A. Stehle ◽  
C. Siegel ◽  
V. Ziegler ◽  
B. Schonlinner ◽  
U. Prechtel ◽  
...  
Keyword(s):  
Rf Mems ◽  
Low Complexity ◽  
Rf Mems Switch ◽  
Mems Switch

RF-MEMS Varactor With Minimal Contact

2004 ◽  
Author(s):  
Qin Shen ◽  
Ioannis Chasiotis ◽  
N. Scott Barker
Keyword(s):  
Rf Mems ◽  
Phase Shifters ◽  
Capacitive Switches ◽  
Intimate Contact ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Matching Networks ◽  
Minimal Contact ◽  
Bottom Side

An innovative RF-MEMS varactor has been developed for use in distributed RF-MEMS circuits such as phase shifters and tunable matching networks where the capacitance ratio between on- and off- state must be limited to 2–10. By fabricating standoffs on the bottom side of the beam, this device eliminates the intimate contact between the FR-MEMS and dielectric, that is found in typical RF-MEMS beam capacitive switches. These standoffs limit the range of motion, allowing the capacitance ratio to be set, and also greatly reduces the contact area thus preventing stiction from occurring. The RF-MEMS switch has been fabricated with initial measurements demonstrating a capacitance ratio of 2.5. Preliminary reliability testing results demonstrate that this RF-MEMS design is very robust.

scholarly journals High-performance inline RF MEMS switch for application in 5G mobile networks

2021 ◽  
Vol 2086 (1) ◽  
pp. 012068
Author(s):  
A V Tkachenko ◽  
I E Lysenko ◽  
A V Kovalev ◽  
D V Vertyanov
Keyword(s):  
Mobile Networks ◽  
High Performance ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Coplanar Waveguide ◽  
Satellite Communications ◽  
Elastic Suspension ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
5G Mobile Networks

Abstract This article presents the results of the design and analysis of a radio-frequency switch made using microelectromechanical systems technology. The device is the capacitive switch with a hybrid type of contact, in which the movable electrode of the structure – the metal membrane is part of the microwave signal line of the coplanar waveguide. The switch design is characterized by a high capacitance ratio and low contact resistance. The zig-zag elastic suspension is used to reduce the value of the pull-down voltage – 2 V and the switching time ∼ 7 us. The central resonant frequency of the switch is 3.8 GHz. In this case, in the open state, the value of the insertion loss is not more than -0.2 dB and the isolation value in the close state is not less than -55 dB. The effective frequency range is the S-band, as well as the C-, X- and Ku-band, in which the isolation value is at least -30 dB. The presented inline RF MEMS switch is suitable for use in various types of ground and satellite communications, in particular for devices and systems of 5G mobile networks.

scholarly journals Novel design and analysis of RF MEMS shunt capacitive switch for radar and satellite communications

2019 ◽  
Vol 15 (2) ◽  
pp. 971
Author(s):  
Maham Kamil Naji ◽  
Alaa Desher Farhood ◽  
Adnan Hussein Ali
Keyword(s):  
Radio Frequency ◽  
High Frequency ◽  
Return Loss ◽  
Rf Mems ◽  
Dielectric Material ◽  
Satellite Communications ◽  
Superior Performance ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

<span>In this paper, a new type of Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) shunt capacitive switch is designed and studied. RF MEMS switch has a number of advantages in a modern telecommunication system such as low power consumption, easy to fabricate and power handling capacity at radio frequency. At high frequency applications, this switch shows very superior performance due to which it now became one of the key elements for RF application. In this proposed design, an innovative type of MEMS switch is designed. The MEMS switch structure consists of substrate, co-planar waveguide (CPW), dielectric material and a metallic bridge. The proposed MEMS switch has a dimension of 508 µm × 620 µm with a height of 500 µm. The substrate used is GaAs material. The relative permittivity of the substrate is 12.9. This proposed MEMS switch is designed and simulated in both UP (ON) state and DOWN (OFF) state. The proposed RF-MEMS switch is designed and simulated using Ansoft High frequency structure simulator (HFSS) electromagnetic simulator. The simulated result shows better performance parameters such as return loss ( &lt;-10 dB)  and insertion loss ( &gt; -0.5 dB) in UP state, whereas return loss ( &gt; -0.5 dB) and isolation (&lt;-10 dB) in DOWN state. This switch has good isolation characteristics of – 43 dB at 27 GHz frequency.</span>

High-power handling capability of low complexity RF-MEMS switch in Ku-band

2007 ◽  
Vol 43 (24) ◽  
pp. 1367 ◽  
Author(s):  
A. Stehle ◽  
C. Siegel ◽  
V. Ziegler ◽  
B. Schönlinner ◽  
U. Prechtel ◽  
...  
Keyword(s):  
High Power ◽  
Rf Mems ◽  
Low Complexity ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Power Handling ◽  
Power Handling Capability ◽  
Ku Band

Application of RF MEMS Switch for Reconfiguring Micromachined Antennas

2014 ◽  
Vol 704 ◽  
pp. 293-298
Author(s):  
Jija Rajmohan ◽  
M.R. Baiju
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switches ◽  
Wireless Applications ◽  
Mems Switch ◽  
Rf Components ◽  
Rf Mems Switches

For mobile and wireless applications where the size of the system has to be minimized, antenna and RF components are to be integrated on to the same substrate. The contradicting requirements of the substrate with respect to the antenna and the RF circuit can be resolved by using micromachined antennas. If the principle of reconfigurability is applied to the micromachined antenna, it increases the versatality of the system. This paper proposes reconfigurability of micromachined antennas using RF MEMS switches. In the case of micromachined antennas, which involve low voltage signals, RF MEMS switches with low actuation voltage are required for achieving reconfigurability. In this paper an RF MEMS capacitive switch operating at a low actuation voltage of 1 Volt is presented

Flexible Circuit-Based RF MEMS Switches

2001 ◽  
Author(s):  
Chunjun Wang ◽  
Ramesh Ramadoss ◽  
Simone Lee ◽  
K. C. Gupta ◽  
Victor M. Bright ◽  
...  
Keyword(s):  
Printed Circuit Board ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Cost ◽  
Polyimide Film ◽  
Circuit Board ◽  
Large Area ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches

Abstract This paper describes a new microelectromechanical systems (MEMS) switch fabricated using flexible circuit technologies. Hundreds of such switches can be laminated onto a large-area printed circuit board (PCB) with other RF devices and circuits. The switches are fabricated using low-cost, low-loss flexible circuit material Kapton-E polyimide film. Switches with actuation voltages as low as 73 V are reported.

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