Characterization and Modeling of Impact Ionization Effects on Small and Large Signal Characteristics of AlGaAs/GaInAs/GaAs PHEMTs

2008 ◽  
Author(s):  
Charles Teyssandier ◽  
Christophe Chang ◽  
Eric Leclerc ◽  
Bernard Carnez ◽  
Fabien de Groote ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Large Signal ◽  
Signal Characteristics

scholarly journals Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 919
Author(s):  
Yang Dai ◽  
Qingsong Ye ◽  
Jiangtao Dang ◽  
Zhaoyang Lu ◽  
Weiwei Zhang ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Wide Bandgap ◽  
Drift Region ◽  
Rf Power ◽  
Large Signal ◽  
Impatt Diode ◽  
Signal Characteristics ◽  
Design And Manufacture ◽  
First Time ◽  
Ddr Impatt

Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper for the first time. The direct-current (DC) steady-state, small-signal and large-signal characteristics are numerically simulated. The results show that compared with the conventional GaN single-drift region (SDR) IMPATT diode, the performance of the p-SiC/n-GaN DDR IMPATT proposed in this design, such as breakdown voltage, negative conductance, voltage modulation factor, radio frequency (RF) power and DC-RF conversion efficiency have been significantly improved. At the same time, the structure proposed in this design has a larger frequency bandwidth. Due to its greater potential in the RF power density, which is 1.97 MW/cm2 in this study, indicates that the p-SiC/n-GaN heterojunction provides new possibilities for the design and manufacture of IMPATT diode.

Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology

2000 ◽  
Vol 44 (11) ◽  
pp. 2059-2067 ◽  
Author(s):  
Jae-Woo Park ◽  
Saeed Mohammadi ◽  
Dimitris Pavlidis ◽  
Christian Dua ◽  
Jean-Luc Guyaux ◽  
...  
Keyword(s):  
High Frequency ◽  
Large Signal ◽  
Transimpedance Amplifiers ◽  
Signal Characteristics
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