Although body contact can solve the problem of floating body effect in the partially-depleted (PD) SOI technology, it still has important influence on the ESD protection performance. In order to investigate the influence of body contact on the ESD protection performance, three different structures are fabricated in 0.35μm PD SOI salicided CMOS technology, they are stick gate structure with body floating, H gate structure with body contact located outside the edge gate, and body tied source (BTS)structure with body contact placed intermittently along the source diffusion. The transmission line pulse generator(TLPG) measured results of these three different structures are compared and analyzed, both the stick gate structure with body floating and BTS structure have a better robustness level than H gate structure with body contact.
