Local strength measurement technique for miniaturised silicon-based components

Author(s):  
Marco Deluca ◽  
Raul Bermejo ◽  
Martin Pletz ◽  
Mike Morianz ◽  
Johannes Stahr ◽  
...  
2012 ◽  
Vol 8 (4) ◽  
pp. 1597-1602 ◽  
Author(s):  
Shih-Hao Huang ◽  
Lian-Shan Lin ◽  
Joel Rudney ◽  
Rob Jones ◽  
Conrado Aparicio ◽  
...  

2018 ◽  
Vol 924 ◽  
pp. 671-675 ◽  
Author(s):  
Gerald Rescher ◽  
Gregor Pobegen ◽  
Thomas Aichinger ◽  
Tibor Grasser

In comparison to silicon based devices, MOSFETs based on silicon carbide show more complex threshold voltage variations caused by positive and negative gate bias stress. We show that the majority of the voltage shift in standard JEDEC-like bias temperature instability measurements originates from stress independent measurement parameters like timing and switching conditions. A more sophisticated bias temperature instability measurement technique using device preconditioning is presented allowing for more accurate and nearly delay time independent extraction of the permanent voltage shift component within typical industrial timescales.


2005 ◽  
Vol 2005.1 (0) ◽  
pp. 697-698
Author(s):  
Miho ISHII ◽  
Ken GOTO ◽  
Hiroshi HATTA ◽  
Ichiro SHIOTA

2020 ◽  
Vol 54 (S2) ◽  
pp. 292-296
Author(s):  
Francesco Luceri ◽  
Davide Cucchi ◽  
Ivan Pichierri ◽  
Carlo Eugenio Zaolino ◽  
Alessandra Menon ◽  
...  

2000 ◽  
Vol 157 (4) ◽  
pp. 320-325 ◽  
Author(s):  
Hideki Kawakatsu ◽  
Hiroshi Toshiyoshi ◽  
Daisuke Saya ◽  
Kimitake Fukushima ◽  
Hiroyuki Fujita

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley

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