Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs

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M. Koyama ◽  
M. Casse ◽  
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S. Barraud ◽  
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...  
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W. Feng ◽  
R. Hettiarachchi ◽  
Y. Lee ◽  
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2016 ◽  
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Jeong-Hwan Lee ◽  
Yong-Jin Choi ◽  
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Vol 78 ◽  
pp. 99-104
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Y.F. Lao ◽  
P.K.D.D.P. Pitigala ◽  
A.G.U. Perera ◽  
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...  

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