Model of Substrate Capacitance of MOSFET RF Switch Inspired by Inverted Microstrip Line

2021 ◽  
Author(s):  
Valentyn Solomko ◽  
Oguzhan Oezdamar ◽  
Robert Weigel ◽  
Amelie Hagelauer
Keyword(s):  
Microstrip Line ◽  
Rf Switch

Dual-Band Microstrip-Line BPFs Using Tap-Coupling Resonators

2008 ◽  
Vol 128 (6) ◽  
pp. 878-884
Author(s):  
Nobuhiko Okuzaki ◽  
Yukihiro Shimakata ◽  
Mitsuyuki Yamauchi ◽  
Kouji Wada ◽  
Takashi Iwasaki
Keyword(s):  
Microstrip Line ◽  
Dual Band

Rotary Coupler in Microstrip Line Design for Data Transmission in the 2.45GHz ISM Band

2020 ◽  
Author(s):  
Benedict Scheiner ◽  
Christopher Beck ◽  
Fabian Lurz ◽  
Martin Frank ◽  
Fabian Michler ◽  
...  
Keyword(s):  
Data Transmission ◽  
Microstrip Line ◽  
Ism Band ◽  
Line Design

Compact ring resonators using negative-refractive-index microstrip line

2005 ◽  
Vol 45 (4) ◽  
pp. 294-295 ◽  
Author(s):  
Aaron D. Scher ◽  
Christopher T. Rodenbeck ◽  
Kai Chang
Keyword(s):  
Refractive Index ◽  
Microstrip Line ◽  
Negative Refractive Index ◽  
Ring Resonators ◽  
Compact Ring

Microstrip-Line EH1/EH2-Mode Leaky-Wave Antennas With Backward-to-Forward Scanning

2020 ◽  
Vol 19 (12) ◽  
pp. 2363-2367
Author(s):  
Peng Fei Zhang ◽  
Lei Zhu ◽  
Sheng Sun
Keyword(s):  
Microstrip Line ◽  
Leaky Wave

scholarly journals RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

2021 ◽  
pp. 1-6
Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  
Keyword(s):  
Power Level ◽  
Coplanar Waveguide ◽  
Average Power ◽  
Input Power ◽  
Capacitive Coupling ◽  
Rf Switch ◽  
Large Signal ◽  
Waveguide Transmission ◽  
Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

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