Determination of Deformation Fields and Visualization of Buried Structures by Atomic Force Acoustic Microscopy

Author(s):  
Bernd Kohler ◽  
Beatrice Bendjus ◽  
Andre Striegler
Ultrasonics ◽  
2000 ◽  
Vol 38 (1-8) ◽  
pp. 430-437 ◽  
Author(s):  
U. Rabe ◽  
S. Amelio ◽  
E. Kester ◽  
V. Scherer ◽  
S. Hirsekorn ◽  
...  

2007 ◽  
Author(s):  
A. Striegler ◽  
N. Pathuri ◽  
B. Köhler ◽  
B. Bendjus

2006 ◽  
Author(s):  
Beatrice Bendjus ◽  
Bernd Köhler ◽  
Henning Heuer ◽  
Ute Rabe ◽  
André Striegler

2007 ◽  
Author(s):  
André Striegler ◽  
Bernd Köhler ◽  
Beatrice Bendjus ◽  
Nagamani Pathuri ◽  
Norbert Meyendorf

Author(s):  
D. Passeri ◽  
A. Bettucci ◽  
M. Germano ◽  
A. Biagioni ◽  
M. Rossi ◽  
...  

2016 ◽  
Vol 61 (1) ◽  
pp. 9-12
Author(s):  
B. Zhang ◽  
H. Wagner ◽  
M. Büchsenschütz-Göbeler ◽  
Y. Luo ◽  
S. Küchemann ◽  
...  

Abstract For the past two decades, atomic force acoustic microscopy (AFAM), an advanced scanning probe microscopy technique, has played a promising role in materials characterization with a good lateral resolution at micro/nano dimensions. AFAM is based on inducing out-of-plane vibrations in the specimen, which are generated by an ultrasonic transducer. The vibrations are sensed by the AFM cantilever when its tip is in contact with the material under test. From the cantilver’s contactresonance spectra, one determines the real and the imaginary part of the contact stiffness k*, and then from these two quantities the local indentation modulus M' and the local damping factor Qloc-1 can be obtained with a spatial resolution of less than 10 nm. Here, we present measured data of M' and of Qloc-1 for the insulating amorphous material, a-SiO2. The amorphous SiO2 layer was prepared on a crystalline Si wafer by means of thermal oxidation. There is a spatial distribution of the indentation modulus M' and of the internal friction Qloc-1. This is a consequence of the potential energy landscape for amorphous materials.


2004 ◽  
Vol 818 ◽  
Author(s):  
I.D. Sharp ◽  
Q. Xu ◽  
C.Y. Liao ◽  
D.O. Yi ◽  
J.W. Ager ◽  
...  

AbstractIsotopically pure 70Ge and 74Ge nanocrystals embedded in SiO2 thin films on Si substrates have been fabricated through ion implantation and thermal annealing. Nanocrystals were subsequently exposed using a hydrofluoric acid etching procedure to selectively remove the oxide matrix while retaining up to 69% of the implanted Ge. Comparison of transmission electron micrographs (TEM) of as-grown crystals to atomic force microscope (AFM) data of exposed crystals reveals that the nanocrystal size distribution is very nearly preserved during etching. Therefore, this process provides a new means to use AFM for rapid and straightforward determination of size distributions of nanocrystals formed in a silica matrix. Once exposed, nanocrystals may be transferred to a variety of substrates, such as conducting metal films and optically transparent insulators for further characterization.


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