Improved Linearity Active Resistors Using MOS and Floating-Gate MOS Transistors

2007 ◽  
Author(s):  
Cosmin Popa
Keyword(s):  
Floating Gate ◽  
Mos Transistors

scholarly journals SIMULATION OF PARASITIC TUNNEL CURRENTS IN FLASH-MEMORY ELEMENTS BASED ON SHORT-CHANNEL MOS-TRANSISTORS

2020 ◽  
Vol 2 (7(76)) ◽  
pp. 26-28
Author(s):  
Oleg Grygoryevich Zhevnyak
Keyword(s):  
Flash Memory ◽  
Tunneling Current ◽  
Floating Gate ◽  
Memory Cells ◽  
Mos Transistors ◽  
Short Channel ◽  
Drain Bias ◽  
Parasitic Currents ◽  
Information Regime ◽  
Long Storage

Simulation of parasitic currents in Flash-memory cells based on short-channel MOSFET. In present paper the distributions of parasitic tunneling current as well as mean electron energy and mobility along the channel are calculated for short-channel MOSFETs by using Monte Carlo simulation of electron drift in such devices. The effect of drain bias in Flash-memory cells on these distributions is investigated for reading information regime. It is shown that the value of parasitic current is very small at considered conditions. But long storage can be change the charge in a floating gate of short-channel MOSFETs.

A nonvolatile analog neural memory using floating-gate MOS transistors

1992 ◽  
Vol 2 (1) ◽  
pp. 19-25 ◽  
Author(s):  
Han Yang ◽  
Bing J. Sheu ◽  
Ji-Chien Lee
Keyword(s):  
Floating Gate ◽  
Mos Transistors

Translinear circuits using subthreshold floating-gate MOS transistors

1996 ◽  
Vol 9 (2) ◽  
pp. 167-179 ◽  
Author(s):  
Bradley A. Minch ◽  
Chris Diorio ◽  
Paul Hasler ◽  
Carver A. Mead
Keyword(s):  
Floating Gate ◽  
Mos Transistors ◽  
Translinear Circuits
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