A class-AB square-root domain biquad filter based on floating gate MOS transistors

2007 ◽  
Author(s):  
Ebrahim Farshidi ◽  
Sayed Masoud Sayedi
Keyword(s):  
Floating Gate ◽  
Square Root ◽  
Mos Transistors ◽  
Class Ab ◽  
Biquad Filter

Micropower class AB CMOS current conveyor based on quasi-floating gate techniques

2009 ◽  
Author(s):  
Antonio J. Lopez-Martin ◽  
Lucia Acosta ◽  
Jose M. Algueta ◽  
Jaime Ramirez-Angulo ◽  
Ramon G. Carvajal
Keyword(s):  
Current Conveyor ◽  
Floating Gate ◽  
Class Ab

Novel Ultra-Low-Power Class AB CCII+ Based on Floating-Gate Folded Cascode OTA

2011 ◽  
Vol 31 (2) ◽  
pp. 447-464 ◽  
Author(s):  
Fabian Khateb ◽  
Nabhan Khatib ◽  
David Kubánek
Keyword(s):  
Low Power ◽  
Floating Gate ◽  
Ultra Low Power ◽  
Class Ab ◽  
Folded Cascode ◽  
Power Class

scholarly journals SIMULATION OF PARASITIC TUNNEL CURRENTS IN FLASH-MEMORY ELEMENTS BASED ON SHORT-CHANNEL MOS-TRANSISTORS

2020 ◽  
Vol 2 (7(76)) ◽  
pp. 26-28
Author(s):  
Oleg Grygoryevich Zhevnyak
Keyword(s):  
Flash Memory ◽  
Tunneling Current ◽  
Floating Gate ◽  
Memory Cells ◽  
Mos Transistors ◽  
Short Channel ◽  
Drain Bias ◽  
Parasitic Currents ◽  
Information Regime ◽  
Long Storage

Simulation of parasitic currents in Flash-memory cells based on short-channel MOSFET. In present paper the distributions of parasitic tunneling current as well as mean electron energy and mobility along the channel are calculated for short-channel MOSFETs by using Monte Carlo simulation of electron drift in such devices. The effect of drain bias in Flash-memory cells on these distributions is investigated for reading information regime. It is shown that the value of parasitic current is very small at considered conditions. But long storage can be change the charge in a floating gate of short-channel MOSFETs.

Sign in / Sign up

Export Citation Format

Share Document