A comparative study of analog/RF performance: Symmetric and asymmetric underlap gate stack DG-MOSFETs

2016 ◽  
Author(s):  
Arpan Dasgupta ◽  
Rahul Das ◽  
Arka Dutta ◽  
Atanu Kundu ◽  
Chandan K. Sarkar
Keyword(s):  
Comparative Study ◽  
Gate Stack ◽  
Rf Performance

Localized breakdown in dielectrics and macroscopic charge transport through the whole gate stack: A comparative study

2008 ◽  
Vol 92 (1) ◽  
pp. 012914 ◽  
Author(s):  
Yi Zheng ◽  
Andrew T. S. Wee ◽  
Yi Ching Ong ◽  
K. L. Pey ◽  
Cedric Troadec ◽  
...  
Keyword(s):  
Comparative Study ◽  
Charge Transport ◽  
Gate Stack

scholarly journals Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

Silicon ◽  
2021 ◽  
Author(s):  
Suddapalli Subba Rao ◽  
Rani Deepika Balavendran Joseph ◽  
Vijaya Durga Chintala ◽  
Gopi Krishna Saramekala ◽  
D. Srikar ◽  
...  
Keyword(s):  
Strained Silicon ◽  
Double Gate ◽  
Gate Stack ◽  
Fixed Charges ◽  
Rf Performance

Influence of Underlap on Gate Stack DG-MOSFET for analytical study of Analog/RF performance

2016 ◽  
Vol 94 ◽  
pp. 60-73 ◽  
Author(s):  
Atanu Kundu ◽  
Arpan Dasgupta ◽  
Rahul Das ◽  
Shramana Chakraborty ◽  
Arka Dutta ◽  
...  
Keyword(s):  
Analytical Study ◽  
Gate Stack ◽  
Dg Mosfet ◽  
Rf Performance

Comparative study of RF performance of DDR IMPATTs based on group IV–IV materials at W-band

2016 ◽  
Author(s):  
Sangeeta Jana Mukhopadhyay ◽  
Suranjana Banerjee ◽  
J.P. Banerjee ◽  
Monojit Mitra
Keyword(s):  
Comparative Study ◽  
Group Iv ◽  
W Band ◽  
Rf Performance
Sign in / Sign up

Export Citation Format

Share Document