Abstract
In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stackgraded channel double gate-Junctionless (TMGS-GCDGJL) strained-Si (s-Si) MOSFET with fixed charge density is analyzed with the help of Sentaurus TCAD. By varying the various device parameters, the analog/RF performance of the proposed TMGS-GCDG-JL s-Si MOSFET is evaluated in terms of transconductance-generationfactor (TGF), early voltage, voltage gain, unity-powergain frequency ( f max ), unity-current-gain frequency ( f t ), and gain-transconductance frequency product (GTFP). The results confirm that the proposed TMGS-GCDGJL s-Si MOSFET has superior analog/RF performance compared to gate stack-graded channel double gatejunctionless (GS-GCDG-JL) s-Si device. However, the proposed MOSFET has less transconductance and less output conductance when compared with the GS-GCDGJL s-Si device in above threshold region, and reverse trend follows in sub-threshold region.
Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-Silicon MOSFET with Fixed Charges