Review of Electronic Industry in Kazakhstan: Conditions and Opportunities

Author(s):  
Gulfarida Tulemissova ◽  
Olimzhon Baimuratov
Keyword(s):  
2019 ◽  
Author(s):  
Daniel Nascimento-e-Silva ◽  
Sharla Brunet Costa Valente ◽  
Chiara da Silva Simões ◽  
Marison Luiz Soares

2020 ◽  
Vol 96 (3s) ◽  
pp. 343-346
Author(s):  
А.Н. Алексеев ◽  
С.И. Петров

Представлены результаты разработки базовых технологических процессов, используемых при получении мощных полевых транзисторов и МИС СВЧ-диапазона на основе GaN и GaAs, таких как: выращивание гетероструктур методом МЛЭ, металлизация и отжиг омических контактов, травление мезаизоляции, затворная металлизация, пассивация диэлектриком и др. Обсуждаются основные проблемы и пути их решения, в том числе особенности технологических процессов глубокого плазмохимического травления для формирования сквозных металлизированных отверстий в SiC и GaAs. Отдельное внимание уделено вопросам обеспечения однородности и воспроизводимости и их влиянию на выход годных структур. Продемонстрированы результаты использования ряда технологических процессов в производственном цикле АО «Светлана-Рост» и других предприятий радиоэлектронной промышленности. The paper presents the results of the development of basic technological processes used in the production of microwave high-power field-effect transistors based on GaN and GaAs such as: MBE growth, metallization and annealing of ohmic contacts, etching of mesa insulation, gate metallization, passivation by dielectric etc. The main problems and solutions including features of technological processes of deep plasma-chemical etching in SiC and GaAs have been discussed. Special attention is paid to the issues of uniformity and reproducibility and their impact on the yield of structures. The results of the use of technological processes in the production cycle of Svetlana-Rost JSC and other enterprises of the radio-electronic industry have been demonstrated.


Author(s):  
E. J. Roberts ◽  
V. Smith ◽  
John S. C. English
Keyword(s):  

2021 ◽  
Vol 5 (199) ◽  
pp. 33-43
Author(s):  
I.F. Bogatyrev ◽  

The purpose of the study is to consider the status of state support, to determine its main trends in Russia, including in the radio-electronic industry, in connection with the harmonization of trade and industrial policy. To achieve the purpose of the study, the main approaches to the concepts of "harmonization", "harmonization of trade and industrial policy" were studied, the place of state support in the structure of the mechanism for harmonization of trade and industrial policy was determined, the problems of state support both in general and specifically in the radio-electronic industry were formulated, the ways of solving these problems were suggested. Within the framework of the study, legislative documents related to state support of the radio-electronic industry are analyzed, its main characteristics are determined. The relevance of state support of enterprises of the military-industrial complex, whose main activity is concentrated on the production of radio electronics, is shown. Possible ways of improving the activities of enterprises of the military-industrial complex are proposed, the use of state support tools of an institutional nature is highlighted. The results of the study have novelty and originality, expand the theory and practice of the issue of harmonization, since they focus on those aspects of it that were not previously considered in detail.


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