A Low-Power Biasing Scheme for the Rail-to-Rail Buffer/Amplifier Applications

Author(s):  
Ugur Cini
Author(s):  
Jia-Hui Wang ◽  
Jing-Chuan Qiu ◽  
Hao-Yuan Zheng ◽  
Chien-Hung Tsai ◽  
Chen-Yu Wang ◽  
...  

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2018
Author(s):  
Chang-Ho An ◽  
Bai-Sun Kong

A high-slew-rate, low-power, CMOS, rail-to-rail buffer amplifier for large flat-panel-display (FPD) applications is proposed. The major circuit of the output buffer is a rail-to-rail, folded-cascode, class-AB amplifier which can control the tail current source using a compact, novel, adaptive biasing scheme. The proposed output buffer amplifier enhances the slew rate throughout the entire rail-to-rail input signal range. To obtain a high slew rate and low power consumption without increasing the static current, the tail current source of the adaptive biasing generates extra current during the transition time of the output buffer amplifier. A column driver IC incorporating the proposed buffer amplifier was fabricated in a 1.6-μm 18-V CMOS technology, whose evaluation results indicated that the static current was reduced by up to 39.2% when providing an identical settling time. The proposed amplifier also achieved up to 49.1% (90% falling) and 19.9 % (99.9% falling) improvements in terms of settling time for almost the same static current drawn and active area occupied.


2010 ◽  
Vol 19 (06) ◽  
pp. 1181-1197 ◽  
Author(s):  
CHIH-WEN LU ◽  
CHING-MIN HSIAO

A compact high-speed low-power rail-to-rail buffer amplifier, which is suitable for driving heavy capacitive loads, is proposed. The buffer amplifier is composed of a pair of push-pull output transistors with two feedback loops consisting of a pair of complementary error amplifiers and a pair of complementary common-source amplifiers. The buffer draws little current while static but has a large driving capability while transient. A mutual bias scheme is also proposed to reduce the power consumption and the die area for LCD applications. An experimental prototype buffer amplifier implemented in a 0.35 μm CMOS technology demonstrates that the settling time is 1.5 μs for a voltage swing of 0.1 ~ (VDD–0.1) V under a 600 pF capacitance load. Quiescent current of 4 μA is measured. The area of this buffer is 32 × 109 μm2.


Sign in / Sign up

Export Citation Format

Share Document