P-222L: Late-News Poster: A Compact High-Speed Low-Power Rail-to-Rail Class-B Buffer Amplifier for LCD Application

2006 ◽  
Vol 37 (1) ◽  
pp. 410 ◽  
Author(s):  
Chih-Wen Lu
2010 ◽  
Vol 6 (5) ◽  
pp. 184-190 ◽  
Author(s):  
Davide Marano ◽  
Gaetano Palumbo ◽  
Salvatore Pennisi

2010 ◽  
Vol 19 (06) ◽  
pp. 1181-1197 ◽  
Author(s):  
CHIH-WEN LU ◽  
CHING-MIN HSIAO

A compact high-speed low-power rail-to-rail buffer amplifier, which is suitable for driving heavy capacitive loads, is proposed. The buffer amplifier is composed of a pair of push-pull output transistors with two feedback loops consisting of a pair of complementary error amplifiers and a pair of complementary common-source amplifiers. The buffer draws little current while static but has a large driving capability while transient. A mutual bias scheme is also proposed to reduce the power consumption and the die area for LCD applications. An experimental prototype buffer amplifier implemented in a 0.35 μm CMOS technology demonstrates that the settling time is 1.5 μs for a voltage swing of 0.1 ~ (VDD–0.1) V under a 600 pF capacitance load. Quiescent current of 4 μA is measured. The area of this buffer is 32 × 109 μm2.


Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 350 ◽  
Author(s):  
Xu Bai ◽  
Jianzhong Zhao ◽  
Shi Zuo ◽  
Yumei Zhou

This paper presents a 2.5 Gbps 10-lane low-power low voltage differential signaling (LVDS) transceiver for a high-speed serial interface. In the transmitter, a complementary MOS H-bridge output driver with a common mode feedback (CMFB) circuit was used to achieve a stipulated common mode voltage over process, voltage and temperature (PVT) variations. The receiver was composed of a pre-stage common mode voltage shifter and a rail-to-rail comparator. The common mode voltage shifter with an error amplifier shifted the common mode voltage of the input signal to the required range, thereby the following rail-to-rail comparator obtained the maximum transconductance to recover the signal. The chip was fabricated using SMIC 28 nm CMOS technology, and had an area of 1.46 mm2. The measured results showed that the output swing of the transmitter was around 350 mV, with a root-mean-square (RMS) jitter of 3.65 [email protected] Gbps, and the power consumption of each lane was 16.51 mW under a 1.8 V power supply.


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