The double gate MOSFET, where two gates are fabricated along the length of the channel one after another. Design of logic gates is one of the most eminent application of Double Gate MOSFET. Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are shown to be promising for digital logic applications. This paper describes the design and analysis of different types of logic gates using GaN based DG-MOSFET. The gate length (LG) is kept constant at 10.6 nm. The gate voltage varies from 0 to 1 V for the device switching from turn OFF to turn ON-state. For the device with HfO2 as gate oxide, the ON-state current (ION) and OFF-state current (IOFF) are found 8.11×10-3 and 6.38605×10-9A/μm respectively. The leakage current is low for the device with HfO2 as compared to that for the device with ZrO2. The subthreshold swing (SS) is 68.7408 mV/dec for the device with HfO2.
Purpose
The purpose of this paper is to present a simple and effective method to search the optimal turn-on and turn-off angles on-line for the control of the switched reluctance motor (SRM). The optimal turn-on and turn-off angles are defined as the ones that can meet torque production requirements with minimum copper loss.
Design/methodology/approach
The optimal turn-on and turn-off angles are first defined based on the analysis of the SRM losses and torque production principles. Then the algorithm for optimal angles searching is developed, and the searching parameters are determined through analytical computation. The optimal angles are approached on-line with iterative process. Simulation and experiments are finally performed to verify the proposed method.
Findings
The presented method can meet torque production requirements while copper loss is minimized. The optimal turn-on and turn-off angles are generally approached within five phase cycles for most of the SRM operation modes. Furthermore, the SRM drive system using the presented method exhibits good dynamics during starting and sudden load operations.
Practical implications
The presented method is simple, and implementation of it is easy. It is an eligible candidate for industrial applications where energy conversion efficiency is crucial.
Originality/value
The optimal turn-off angle definition that considers both torque production and copper loss minimization is proposed. The turn-on and turn-off angles are searched independently on-line with little SRM geometrical information. The searching steps are derived through analytical computation and qualitative analysis so that both the searching speed and algorithm convergence are balanced.
Design and Analysis of Logic Gates using GaN based Double Gate MOSFET (DG-MOS)