RF Front-End CMOS Receiver with Antenna for Millimeter-Wave Applications

Author(s):  
Wen-Cheng Lai
2014 ◽  
Vol 2014 ◽  
pp. 1-8
Author(s):  
Yiming Niu ◽  
Can Cui ◽  
Guo Yang ◽  
Wen Wu

A dual-polarization total power millimeter wave (MMW) radiometer with single channel was proposed in this paper. It completed the subtraction of two orthogonally polarized signals in the RF front end. The system used one channel to achieve the function of two channels. On the basis of discussing the theory and the configuration of the system, the performance of the system and the ability to identify the false target were analyzed and simulated. The results showed the radiometer could solve the problem that the performance of dual-polarization radiometer becomes weak because of gain inconformity with two channels. The system was cheap and small and could identify the false target which has different apparent temperatures at vertical- and horizontal-polarized radiations.


Author(s):  
A Madjar ◽  
D Behar ◽  
A Sabban ◽  
I Shapir ◽  
M Ruberto ◽  
...  

2017 ◽  
Vol 68 ◽  
pp. 99-104
Author(s):  
Pierre Payet ◽  
Jeremy Raoult ◽  
Laurent Chusseau

Symmetry ◽  
2020 ◽  
Vol 12 (7) ◽  
pp. 1167
Author(s):  
Evgeny Erofeev ◽  
Vadim Arykov ◽  
Michael Stepanenko ◽  
Aleksei Voevodin ◽  
Aleksei Kogai ◽  
...  

Millimeter-wave wireless networks of the new fifth generation (5G) have become a primary focus in the development of the information and telecommunication industries. It is expected that 5G wireless networks will increase the data rates and reduce network latencies by an order of magnitude, which will create new telecommunication services for all sectors of the economy. New electronic components such as 28 GHz (27.5 to 28.35 GHz) single-chip transmit radio frequency (RF) front-end monolithic microwave integrated circuits (MMICs) will be required for the performance and power consumption of millimeter-wave (mm-wave) 5G communication systems. This component includes a 6-bit digital phase shifter, a driver amplifier and a power amplifier. The output power P3dB and power-added efficiency (PAE) are 29 dBm and 19.2% at 28 GHz. The phase shifter root-mean-square (RMS) phase and gain errors are 3° and 0.6 dB at 28 GHz. The chip dimensions are 4.35 × 4.40 mm.


2021 ◽  
Author(s):  
Spyridon Daskalakis ◽  
Apostolos Georgiadis ◽  
John Kimionis ◽  
Manos Tentzeris

Abstract In this article, a low cost ink-jet printed millimeter-wave RF front-end for low-complexity Gigabit-datarate backscatter communications was designed, fabricated and measured. The RF front-end consists of a microstrip 5×1 series-fed patch antenna array and a single E-pHEMT transistor, supporting a plethora of modulation formats, including binary phase shift keying (BPSK), quadrature phase shift keying (QPSK), and quadrature amplitude modulation (16-QAM). The circuit was additively manufactured using inkjet printing with silver nanoparticle (SNP) inks on a flexible liquid crystal polymer (LCP) substrate. A mmWave transceiver was also designed in order to capture and downconvert the backscattered signals and route them for digital signal processing. A bit rate of 2 Gbps of backscatter transmission is demonstrated at millimeter-wave frequencies 24-28 GHz, expanding the potential of backscatter radio as an ambitious low-energy, low-complexity communication system for future IoT devices. By pushing the circuit complexity to a central station/access point, the radio’s footprint is minimized, which allows additive manufacturing, resulting in significant implementation savings and compatibility with flexible platforms. The wideband operation of these systems will enable broadband wireless transmission with less than 0.17 pJ/bit front-end consumption at 2 Gbps and combined with sensing with low-power sensors and can be integrated with wearables for challenging mobile applications in 5G and the Internet of Things (IoT).


2021 ◽  
Author(s):  
Jun-Kai Lai ◽  
Zhi-Jian Chen ◽  
Yu Zou ◽  
Bin Li ◽  
Xiao-Ling Lin

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