High performance buried heterostructure λ=1.5 μm InGaAs/AlGaInAs strained-layer quantum well laser diodes

2002 ◽  
Author(s):  
P.J.A. Thijs ◽  
T. van Dongen ◽  
J.J.M. Binsma ◽  
E.J. Jansen
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Laser Diodes ◽  
Strained Layer ◽  
Quantum Well Laser ◽  
Buried Heterostructure

High-performance 155-μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

1998 ◽  
Author(s):  
Xiaoyu Ma ◽  
Qing Cao ◽  
Shutang Wang ◽  
Liang Guo ◽  
Zhongming Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Laser Diodes ◽  
Strained Layer ◽  
Quantum Well Laser

High-Performance Strain-Compensated Multiple Quantum Well Planar Buried Heterostructure Laser Diodes with Low Leakage Current

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1751-1757 ◽  
Author(s):  
Ho Sung Cho ◽  
Dong Hoon Jang ◽  
Jung Kee Lee ◽  
Kyung Hyun Park ◽  
Jeong Soo Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Leakage Current ◽  
High Performance ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Low Leakage ◽  
Heterostructure Laser ◽  
Low Leakage Current ◽  
Buried Heterostructure
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