Application of self-assembled InAs nanodots for a HEMT-type memory-effect transistor

2002 ◽  
Author(s):  
K. Koike ◽  
S. Li ◽  
K. Saitoh ◽  
S. Sasa ◽  
M. Inoue ◽  
...  
Keyword(s):  
Memory Effect ◽  
Effect Transistor ◽  
Self Assembled

Resistive memory effect in self-assembled 3-aminopropyltrimethoxysilane molecular multilayers

2008 ◽  
Vol 205 (2) ◽  
pp. 373-377 ◽  
Author(s):  
A. K. Chauhan ◽  
D. K. Aswal ◽  
S. P. Koiry ◽  
N. Padma ◽  
V. Saxena ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Memory ◽  
Self Assembled

High-performance ambipolar self-assembled Au/Ag nanowire based vertical quantum dot field effect transistor

2016 ◽  
Vol 27 (40) ◽  
pp. 405201 ◽  
Author(s):  
Xiaoxian Song ◽  
Yating Zhang ◽  
Haiting Zhang ◽  
Yu Yu ◽  
Mingxuan Cao ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Self Assembled ◽  
Ag Nanowire

scholarly journals A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

RSC Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 3336-3342 ◽  
Author(s):  
Marc Courté ◽  
Sandeep G. Surya ◽  
Ramesh Thamankar ◽  
Chao Shen ◽  
V. Ramgopal Rao ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Memory Effect ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Resistive Memory ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Effect Transistor

A non-volatile resistive memory effect is observed in 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, in a field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM).

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