Resistive memory effect in self-assembled 3-aminopropyltrimethoxysilane molecular multilayers

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

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The Temperature Dependence of Relaxation of Resistive Memory Effect in a Metal/PLZT Thin Film

Ferroelectrics ◽

10.1080/00150190601187492 ◽

2007 ◽

Vol 347 (1) ◽

pp. 137-139

Author(s):

Kazumasa Yamada ◽

Shigeru Kaku ◽

Mizuki Yamato ◽

Daisuke Matsumoto ◽

Yukio Watanabe

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Memory Effect ◽

Resistive Memory ◽

Plzt Thin Film

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Efficient resistive memory effect on SrTiO3 by ionic-bombardment

Applied Physics Letters ◽

10.1063/1.3633114 ◽

2011 ◽

Vol 99 (9) ◽

pp. 092105 ◽

Cited By ~ 14

Author(s):

Heiko Gross ◽

Seongshik Oh

Keyword(s):

Memory Effect ◽

Resistive Memory ◽

Ionic Bombardment

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Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots

Applied Physics Letters ◽

10.1063/1.126065 ◽

2000 ◽

Vol 76 (11) ◽

pp. 1464-1466 ◽

Cited By ~ 42

Author(s):

K. Koike ◽

K. Saitoh ◽

S. Li ◽

S. Sasa ◽

M. Inoue ◽

...

Keyword(s):

Memory Effect ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistor ◽

Effect Transistor ◽

Self Assembled ◽

Room Temperature Operation

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A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

RSC Advances ◽

10.1039/c6ra26876e ◽

2017 ◽

Vol 7 (6) ◽

pp. 3336-3342 ◽

Cited By ~ 4

Author(s):

Marc Courté ◽

Sandeep G. Surya ◽

Ramesh Thamankar ◽

Chao Shen ◽

V. Ramgopal Rao ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Memory Effect ◽

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Resistive Memory ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force ◽

Effect Transistor

A non-volatile resistive memory effect is observed in 2,2′,6,6′-tetraphenyldipyranylidene (DIPO-Ph4), a large planar quinoïd π-conjugated heterocycle, in a field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM).

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Metal-Free, Single-Polymer Device Exhibits Resistive Memory Effect

ACS Nano ◽

10.1021/nn403873c ◽

2013 ◽

Vol 7 (12) ◽

pp. 10518-10524 ◽

Cited By ~ 46

Author(s):

Unnat S. Bhansali ◽

Mohd A. Khan ◽

Dongkyu Cha ◽

Mahmoud N. AlMadhoun ◽

Ruipeng Li ◽

...

Keyword(s):

Memory Effect ◽

Resistive Memory ◽

Metal Free

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Mechanism of resistive memory effect in Ga doped ZnO thin films

physica status solidi (c) ◽

10.1002/pssc.200983253 ◽

2010 ◽

Vol 7 (6) ◽

pp. 1712-1714 ◽

Cited By ~ 1

Author(s):

Kentaro Kinoshtia ◽

Toshio Hinoki ◽

Kenji Yazawa ◽

Koutoku Ohmi ◽

Satoru Kishida

Keyword(s):

Thin Films ◽

Memory Effect ◽

Zno Thin Films ◽

Resistive Memory ◽

Doped Zno

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Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

RSC Advances ◽

10.1039/c7ra90012k ◽

2017 ◽

Vol 7 (16) ◽

pp. 9772-9772

Author(s):

Marc Courté ◽

Sandeep G. Surya ◽

Ramesh Thamankar ◽

Chao Shen ◽

V. Ramgopal Rao ◽

...

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Memory Effect ◽

Field Effect ◽

Field Effect Transistors ◽

Resistive Memory ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force

Correction for ‘A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy’ by Marc Courté et al., RSC Adv., 2017, 7, 3336–3342.

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