Characteristics of the Power Electronics Equipments applying the SiC power devices

2012 ◽  
Author(s):  
Yasushi Matsumoto ◽  
Ryuji Yamada ◽  
Yasushi Kondo ◽  
Yoshinari Ikeda ◽  
Hiroshi Kimura
Keyword(s):  
Power Electronics ◽  
Power Devices

Low-Temperature Joining Technique as Interconnection Technology for Power Electronics

2011 ◽  
Vol 324 ◽  
pp. 437-440
Author(s):  
Raed Amro
Keyword(s):  
Low Temperature ◽  
Power Electronics ◽  
Life Time ◽  
Junction Temperature ◽  
Limiting Factors ◽  
Power Devices ◽  
Packaging Technology ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wires

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

Characteristics of the power electronics equipments applying the SiC power devices

2012 ◽  
Author(s):  
Hironori Mine ◽  
Yasushi Matsumoto ◽  
Ryuji Yamada ◽  
Kazuaki Mino ◽  
Hiroshi Kimura ◽  
...  
Keyword(s):  
Power Electronics ◽  
Power Devices

scholarly journals New Applications in Power Electronics Based on SiC Power Devices

2008 ◽  
Vol 600-603 ◽  
pp. 925-930 ◽  
Author(s):  
Hervé Morel ◽  
Dominique Bergogne ◽  
Dominique Planson ◽  
Brunp Allard ◽  
Régis Meuret
Keyword(s):  
Power Electronics ◽  
Power Devices ◽  
New Applications

SIC power devices in power electronics: An overview

2017 ◽  
Author(s):  
Luciano F. S. Alves ◽  
Ruan C. M. Gomes ◽  
Pierre Lefranc ◽  
Raoni De A. Pegado ◽  
Pierre-Olivier Jeannin ◽  
...  
Keyword(s):  
Power Electronics ◽  
Power Devices
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