Resonant Tunneling Diodes on Si Substrates Using Fluoride Heterostructures and Feasibility of Application to Integrated Circuits

2006 ◽  
Author(s):  
Kazuo Tsutsui ◽  
So Watanabe ◽  
Motoki Maeda ◽  
Tsuyoshi Sugisaki ◽  
Yohei Toriumi
Keyword(s):  
Integrated Circuits ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Si Substrates ◽  
Tunneling Diodes

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF2 AND CaF2 on Si(111)

1996 ◽  
Vol 448 ◽  
Author(s):  
Akira Izumi ◽  
Noriyuki Matsubara ◽  
Yusuke Kushida ◽  
Kazuo Tsutsui ◽  
Nikolai S. Sokolov
Keyword(s):  
Conduction Band ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Quantum Effect ◽  
Differential Resistance ◽  
Resonant Tunneling Diodes ◽  
Current Ratio ◽  
Si Substrates ◽  
Tunneling Diodes

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.

Heteroepitaxy of Cd-Rich CaxCd1-xF2Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2453-2457 ◽  
Author(s):  
Motoki Maeda ◽  
Hiroshi Kambayashi ◽  
So Watanabe ◽  
Kazuo Tsutsui
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Si Substrates ◽  
Tunneling Diodes
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