Characterisation of electron traps in high-k dielectric stacks for Flash memory applications using fast pulse techniques

2012 ◽  
Author(s):  
W. D. Zhang ◽  
C. Robinson ◽  
X. F. Zheng ◽  
J. F. Zhang
Keyword(s):  
Flash Memory ◽  
Electron Traps ◽  
High K ◽  
High K Dielectric ◽  
Memory Applications ◽  
Fast Pulse

Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications

2006 ◽  
pp. 156-166
Author(s):  
Marco Fanciulli ◽  
Michele Perego ◽  
C. Bonafos ◽  
A. Mouti ◽  
S. Schamm ◽  
...  
Keyword(s):  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric ◽  
Memory Applications

scholarly journals Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications

2007 ◽  
Vol 102 (9) ◽  
pp. 094307 ◽  
Author(s):  
M. Y. Chan ◽  
P. S. Lee ◽  
V. Ho ◽  
H. L. Seng
Keyword(s):  
Nonvolatile Memory ◽  
High K ◽  
High K Dielectric ◽  
Memory Applications ◽  
Ge Nanocrystals

Formation of Ge Nanocrystals in High-k Dielectric Layers for Memory Applications

2010 ◽  
Vol 1250 ◽  
Author(s):  
Panagiotis Dimitrakis ◽  
Vassilios Ioannou-Sougleridis ◽  
Pascal Normand ◽  
Caroline Bonafos ◽  
Sylvie Schamm ◽  
...  
Keyword(s):  
Ion Beam ◽  
Differential Resistance ◽  
Furnace Annealing ◽  
High K ◽  
Before And After ◽  
Nitrogen Annealing ◽  
High K Dielectric ◽  
Memory Applications ◽  
Mis Capacitors ◽  
Storage Properties

AbstractIn this paper, the fabrication of Ge-NCs embedded in Al2O3 and HfO2 layers by ion-beam-synthesis for memory applications is investigated. Structural properties of the high-k layers before and after implantation and annealing were studied by TEM observation and EELs analysis. Spherical Ge-NCs 5nm in diameter were observed in Al2O3 implanted layers after furnace annealing at 800°C in nitrogen. Annealing studies in the range 700-1050°C in nitrogen revealed the evolution of the charge storage properties of these structures utilizing MIS capacitors test structures. No NCs were observed in HfO2 implanted layers. However, significant negative-differential-resistance regions were observed in I-V characteristics of the related MIS structures. These may be attributed to the formation of conductive paths made of hafnium germanide (HfGe2) or hafnium germanate (HfGeO) regions.

Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory

2005 ◽  
Vol 86 (15) ◽  
pp. 152908 ◽  
Author(s):  
Chang-Hyun Lee ◽  
Sung-Hoi Hur ◽  
You-Cheol Shin ◽  
Jeong-Hyuk Choi ◽  
Dong-Gun Park ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
High Density ◽  
Device Structure ◽  
High K ◽  
High K Dielectric ◽  
Trapping Device
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