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Electrical Characteristics of SiO$_{2}$/High-k Dielectric Stacked Tunnel Barriers for Nonvolatile Memory Applications
Journal of the Korean Physical Society
◽
10.3938/jkps.55.116
◽
2009
◽
Vol 55
(1)
◽
pp. 116-119
◽
Cited By ~ 10
Author(s):
Goon-Ho Park
◽
Kwan-Su Kim
◽
Myung-Ho Jung
◽
Won-Ju Cho
◽
Jongwan Jung
Keyword(s):
Nonvolatile Memory
◽
Electrical Characteristics
◽
High K
◽
Tunnel Barriers
◽
High K Dielectric
◽
Memory Applications
Download Full-text
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References
Impact of HfO2 buffer layer on the electrical characteristics of ferroelectric/high-k gate stack for nonvolatile memory applications
Applied Physics A
◽
10.1007/s00339-020-03632-0
◽
2020
◽
Vol 126
(6)
◽
Cited By ~ 1
Author(s):
Rajesh Kumar Jha
◽
Prashant Singh
◽
Upendra Kashniyal
◽
Manish Goswami
◽
B. R. Singh
Keyword(s):
Buffer Layer
◽
Nonvolatile Memory
◽
Electrical Characteristics
◽
Gate Stack
◽
High K
◽
Memory Applications
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Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications
Journal of Applied Physics
◽
10.1063/1.2803883
◽
2007
◽
Vol 102
(9)
◽
pp. 094307
◽
Cited By ~ 18
Author(s):
M. Y. Chan
◽
P. S. Lee
◽
V. Ho
◽
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Keyword(s):
Nonvolatile Memory
◽
High K
◽
High K Dielectric
◽
Memory Applications
◽
Ge Nanocrystals
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Structural and electrical characteristics of high-k Tb2O3 and Tb2TiO5 charge trapping layers for nonvolatile memory applications
Journal of Applied Physics
◽
10.1063/1.3490179
◽
2010
◽
Vol 108
(7)
◽
pp. 074501
◽
Cited By ~ 15
Author(s):
Tung-Ming Pan
◽
Fa-Hsyang Chen
◽
Ji-Shing Jung
Keyword(s):
Nonvolatile Memory
◽
Charge Trapping
◽
Electrical Characteristics
◽
High K
◽
Memory Applications
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New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications
ECS Transactions
◽
10.1149/1.3372599
◽
2019
◽
Vol 28
(2)
◽
pp. 443-447
Author(s):
Wen-chieh Shih
◽
Fu-Chien Chiu
◽
Huey-Liang Hwang
Keyword(s):
Nonvolatile Memory
◽
Field Effect
◽
Field Effect Transistors
◽
Oxide Semiconductor
◽
High K
◽
Memory Applications
Download Full-text
Electrical characteristics of atomic layer deposited aluminium oxide and lanthanum-zirconium oxide high-k Dielectric stacks
2009 10th International Conference on Ultimate Integration of Silicon
◽
10.1109/ulis.2009.4897573
◽
2009
◽
Author(s):
S. Abermann
◽
C. Henkel
◽
O. Bethge
◽
E. Bertagnolli
Keyword(s):
Zirconium Oxide
◽
Aluminium Oxide
◽
Atomic Layer
◽
Electrical Characteristics
◽
High K
◽
High K Dielectric
◽
Lanthanum Zirconium Oxide
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Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications
Microelectronics Reliability
◽
10.1016/j.microrel.2007.01.027
◽
2007
◽
Vol 47
(4-5)
◽
pp. 606-609
◽
Cited By ~ 4
Author(s):
Hsin-hao Hsu
◽
Joseph Ya-min Lee
Keyword(s):
Metal Oxide
◽
Electrical Characterization
◽
Oxide Semiconductor
◽
High K
◽
High K Dielectric
◽
Memory Applications
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Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications
Advances in Science and Technology - Disclosing Materials at the Nanoscale
◽
10.4028/3-908158-07-9.156
◽
2006
◽
pp. 156-166
Author(s):
Marco Fanciulli
◽
Michele Perego
◽
C. Bonafos
◽
A. Mouti
◽
S. Schamm
◽
...
Keyword(s):
High K
◽
Non Volatile Memory
◽
Volatile Memory
◽
High K Dielectric
◽
Memory Applications
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Structural and electrical characteristics of a high-k Lu2O3 charge trapping layer for nonvolatile memory application
Materials Chemistry and Physics
◽
10.1016/j.matchemphys.2012.02.017
◽
2012
◽
Vol 133
(2-3)
◽
pp. 1066-1070
◽
Cited By ~ 4
Author(s):
Tung-Ming Pan
◽
Fa-Hsyang Chen
◽
Ji-Shing Jung
Keyword(s):
Nonvolatile Memory
◽
Charge Trapping
◽
Electrical Characteristics
◽
High K
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Physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals for nanoscale nonvolatile memory applications
2008 9th International Conference on Solid-State and Integrated-Circuit Technology
◽
10.1109/icsict.2008.4734700
◽
2008
◽
Author(s):
W. Banerjee
◽
S. Maikap
Keyword(s):
Nonvolatile Memory
◽
Atomic Layer
◽
Electrical Characteristics
◽
Memory Applications
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Nonvolatile Memory Characteristics Induced in High-k Dielectric Thin Films through Electron Irradiation
Journal of the Korean Physical Society
◽
10.3938/jkps.59.726
◽
2011
◽
Vol 59
(2(2))
◽
pp. 726-729
◽
Cited By ~ 1
Author(s):
Chan-Rock Park
◽
Hong-Kyoung Lee
◽
Jin-Ha Hwang
◽
Young-Hwan Hahn
◽
Byeong-Cheol Lee
◽
...
Keyword(s):
Thin Films
◽
Electron Irradiation
◽
Nonvolatile Memory
◽
Dielectric Thin Films
◽
High K
◽
High K Dielectric
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Memory Characteristics
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