Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications

2007 ◽  
Vol 47 (4-5) ◽  
pp. 606-609 ◽  
Author(s):  
Hsin-hao Hsu ◽  
Joseph Ya-min Lee
Keyword(s):  
Metal Oxide ◽  
Electrical Characterization ◽  
Oxide Semiconductor ◽  
High K ◽  
High K Dielectric ◽  
Memory Applications

Electrical characterization of top-gated molybdenum disulfide metal–oxide–semiconductor capacitors with high-k dielectrics

2015 ◽  
Vol 147 ◽  
pp. 151-154 ◽  
Author(s):  
P. Zhao ◽  
P.B. Vyas ◽  
S. McDonnell ◽  
P. Bolshakov-Barrett ◽  
A. Azcatl ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Molybdenum Disulfide ◽  
Electrical Characterization ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K

Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc[sub 2]O[sub 3] as the Gate Oxide

2002 ◽  
Vol 5 (7) ◽  
pp. G51 ◽  
Author(s):  
R. Mehandru ◽  
B. P. Gila ◽  
J. Kim ◽  
J. W. Johnson ◽  
K. P. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electrical Characterization ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Diode

Electrical characterization of deoxyribonucleic acid hybridization in metal-oxide-semiconductor-like structures

2012 ◽  
Vol 101 (9) ◽  
pp. 093703 ◽  
Author(s):  
S. Libertino ◽  
G. Cannella ◽  
V. Aiello ◽  
A. Busacca ◽  
S. Lombardo
Keyword(s):  
Metal Oxide ◽  
Deoxyribonucleic Acid ◽  
Electrical Characterization ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO2/ HfO2 Interface

2004 ◽  
Vol 830 ◽  
Author(s):  
Ch. Sargentis ◽  
K. Giannakopoulos ◽  
A. Travlos ◽  
D. Tsamakis
Keyword(s):  
High Frequency ◽  
Semiconductor Nanocrystals ◽  
Electrical Characterization ◽  
Pt Nanoparticles ◽  
Memory Device ◽  
Memory Devices ◽  
High K ◽  
High K Dielectric ◽  
Mos Device

ABSTRACTMOS memory devices containing semiconductor nanocrystals have drawn considerable attention recently, due to their advantages when compared to the conventional memories. Only little work has been done on memory devices containing metal nanoparticles.We describe the fabrication of a novel MOS device with embedded Pt nanoparticles in the HfO2 / SiO2 interface of a MOS device. Using as control oxide, a high-k dielectric, our device has a great degree of scalability. The fabricated nanoparticles are very small (about 5 nm) and have high density. High frequency C-V measurements demonstrate that this device operates as a memory device.

Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor

2012 ◽  
Vol 112 (3) ◽  
pp. 034514 ◽  
Author(s):  
Souvik Kundu ◽  
Nripendra N. Halder ◽  
D. Biswas ◽  
P. Banerji ◽  
T. Shripathi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
High K Dielectric ◽  
Metal Oxide Semiconductor Capacitor

Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments

2011 ◽  
Vol 32 (6) ◽  
pp. 752-754 ◽  
Author(s):  
H. D. Trinh ◽  
G. Brammertz ◽  
E. Y. Chang ◽  
C. I. Kuo ◽  
C. Y. Lu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electrical Characterization ◽  
Metal Oxide Semiconductor ◽  
Surface Treatments ◽  
Oxide Semiconductor
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