Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress
2015 ◽
Vol 36
(9)
◽
pp. 902-904
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2011 ◽
Vol 158
(4)
◽
pp. H452
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2018 ◽
Vol 36
(4)
◽
pp. 042201
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2001 ◽
Vol 40
(Part 1, No. 4A)
◽
pp. 2186-2190
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