Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress

Author(s):  
Lei Shi ◽  
Shi-Wei Feng ◽  
Chun-Sheng Guo ◽  
Hui Zhu
2011 ◽  
Vol 20 (6) ◽  
pp. 067304 ◽  
Author(s):  
Xiao-Hua Ma ◽  
Ji-Gang Ma ◽  
Li-Yuan Yang ◽  
Qiang He ◽  
Ying Jiao ◽  
...  

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