Piezoelectricity-Induced Schottky Barrier Height Variations in AlGaN/GaN High Electron Mobility Transistors

High Electron ◽

High Electron Mobility ◽

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology ◽

Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress

10.1109/icsict.2012.6467706 ◽

2012 ◽

Author(s):

Lei Shi ◽

Shi-Wei Feng ◽

Chun-Sheng Guo ◽

Hui Zhu

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Electron Mobility ◽

Schottky Barrier Height ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electrical Stress

Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs∕InGaAs high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.2393005 ◽

2006 ◽

Vol 89 (21) ◽

pp. 211910 ◽

Cited By ~ 8

Author(s):

Liang Wang ◽

Weifeng Zhao ◽

Ilesanmi Adesida

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Electron Mobility ◽

Schottky Barrier Height ◽

Interfacial Reactions ◽

High Electron ◽

High Electron Mobility ◽

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors withfT/fmaxof 41/125 GHz

Applied Physics Express ◽

10.7567/apex.10.076501 ◽

2017 ◽

Vol 10 (7) ◽

pp. 076501

Author(s):

Bin Hou ◽

Xiaohua Ma ◽

Ling Yang ◽

Jiejie Zhu ◽

Qing Zhu ◽

...

Keyword(s):

Schottky Barrier ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Investigations on InP/InAlAsSb/GaAs Metamorphic High Electron Mobility Transistors with a Dual-Composition-Graded InxGa1−xAs1−ySby Channel and Different Schottky-Barrier Gate Structures

Journal of The Electrochemical Society ◽

10.1149/1.3552933 ◽

2011 ◽

Vol 158 (4) ◽

pp. H452 ◽

Cited By ~ 15

Author(s):

Ching-Sung Lee ◽

Wei-Tin Chien

Keyword(s):

Schottky Barrier ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-µm-gate High Electron Mobility Transistors for High-Speed ICs

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.2186 ◽

2001 ◽

Vol 40 (Part 1, No. 4A) ◽

pp. 2186-2190 ◽

Cited By ~ 8

Author(s):

Hideaki Matsuzaki ◽

Jiro Osaka ◽

Toshihiro Itoh ◽

Kimikazu Sano ◽

Koichi Murata

Keyword(s):

Schottky Barrier ◽

Electron Mobility ◽

Resonant Tunneling ◽

High Speed ◽

High Electron ◽

Schottky Barrier Diodes ◽

High Electron Mobility ◽

Tunneling Diodes ◽

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Oxide Electrodes

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108050 ◽

2021 ◽

pp. 108050

Author(s):

Maria Glória Caño de Andrade ◽

Luis Felipe de Oliveira Bergamim ◽

Braz Baptista Júnior ◽

Carlos Roberto Nogueira ◽

Fábio Alex da Silva ◽

...

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

Frequency Noise ◽

High Electron ◽

Low Frequency Noise ◽

High Electron Mobility ◽

Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

Gan On Si