Ultra-dense, low-loss, universal optical coupling solution for optical chip scale package

Author(s):  
Qing Zhao ◽  
Xiaolu Song ◽  
Zhen Dong ◽  
Lei Gao ◽  
Jun Liu ◽  
...  
Optica ◽  
2018 ◽  
Vol 5 (2) ◽  
pp. 219 ◽  
Author(s):  
Guangyao Liu ◽  
Vladimir S. Ilchenko ◽  
Tiehui Su ◽  
Yi-Chun Ling ◽  
Shaoqi Feng ◽  
...  
Keyword(s):  

2007 ◽  
Vol E90-C (3) ◽  
pp. 641-643
Author(s):  
H. ITO ◽  
H. SUGITA ◽  
K. OKADA ◽  
T. ITO ◽  
K. ITOI ◽  
...  

Author(s):  
Juniyali Nauriyal ◽  
Raymond Yu ◽  
Meiting Song ◽  
Jaime Cardenas
Keyword(s):  

2018 ◽  
Vol 24 (4) ◽  
pp. 1-11 ◽  
Author(s):  
Roger Dangel ◽  
Antonio La Porta ◽  
Daniel Jubin ◽  
Folkert Horst ◽  
Norbert Meier ◽  
...  

Author(s):  
David C. Joy ◽  
Dennis M. Maher

High-resolution images of the surface topography of solid specimens can be obtained using the low-loss technique of Wells. If the specimen is placed inside a lens of the condenser/objective type, then it has been shown that the lens itself can be used to collect and filter the low-loss electrons. Since the probeforming lenses in TEM instruments fitted with scanning attachments are of this type, low-loss imaging should be possible.High-resolution, low-loss images have been obtained in a JEOL JEM 100B fitted with a scanning attachment and a thermal, fieldemission gun. No modifications were made to the instrument, but a wedge-shaped, specimen holder was made to fit the side-entry, goniometer stage. Thus the specimen is oriented initially at a glancing angle of about 30° to the beam direction. The instrument is set up in the conventional manner for STEM operation with all the lenses, including the projector, excited.


Author(s):  
Oliver C. Wells

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.


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