Recent progress of power semiconductor devices and their futures

Author(s):  
Noriyuki Iwamuro
2019 ◽  
Vol 954 ◽  
pp. 90-98 ◽  
Author(s):  
Noriyuki Iwamuro

SiC MOSFETs are superior candidates as next power semiconductor devices for many power transform systems. Owing to high requirement of stability for the whole application systems, it is essential to explore the optimized structures and operations for SiC MOSFETs with not only the extremely low on resistance but also much higher robustness. Overview on recent device technologies of SiC MOSFETs is given.


2014 ◽  
Vol 134 (6) ◽  
pp. 432-433
Author(s):  
Masahiro Sato ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Keisuke Yamashiro ◽  
Yuji Hayase ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document