A high accuracy bandgap reference with chopped modulator to compensate MOSFET mismatch

2005 ◽  
Author(s):  
Liu Lian-xi ◽  
Yang Yin-tang ◽  
Zhu Zhang-ming
Keyword(s):  
High Accuracy ◽  
Bandgap Reference

scholarly journals Compact and Low-Power Under-Voltage Lockout and Thermal-Shutdown Protection Circuits Using a Novel Low-IQ All-in-One Bandgap Comparator

2021 ◽  
Author(s):  
Van Ha Nguyen
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Accuracy ◽  
Bandgap Reference ◽  
Temperature Range ◽  
Static Power ◽  
Protection Circuits ◽  
Simulation Results ◽  
Low Iq ◽  
Soi Technology

This paper presents a novel and compact bandgap comparator (BGRCOMP) for under-voltage lockout (UVLO) and thermal shutdown (TSD) protection circuits. The proposed BGRCOMP is self-referenced and combines the advantages of both a high-accuracy bandgap reference and a comparator into one single circuit. A latch-controlled biasing technique is also presented, which reduces static power consumption of the proposed BGRCOMP. The proposed BGRCOMP is used for the design of compact and low power UVLO and TSD circuits. The post-layout simulation results using a 0.18 µm BCD-on-SOI technology prove the attractive performance of the UVLO and TSD with a static current (I<sub>Q</sub>) of 7.76 µA and 5.4 µA from a 5 V supply, respectively. The deviations of UVLO thresholds are less than 3 mV in the temperature range of -40~85 °C.

scholarly journals Compact and Low-Power Under-Voltage Lockout and Thermal-Shutdown Protection Circuits Using a Novel Low-IQ All-in-One Bandgap Comparator

2021 ◽  
Author(s):  
Van Ha Nguyen
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Accuracy ◽  
Bandgap Reference ◽  
Temperature Range ◽  
Static Power ◽  
Protection Circuits ◽  
Simulation Results ◽  
Low Iq ◽  
Soi Technology

This paper presents a novel and compact bandgap comparator (BGRCOMP) for under-voltage lockout (UVLO) and thermal shutdown (TSD) protection circuits. The proposed BGRCOMP is self-referenced and combines the advantages of both a high-accuracy bandgap reference and a comparator into one single circuit. A latch-controlled biasing technique is also presented, which reduces static power consumption of the proposed BGRCOMP. The proposed BGRCOMP is used for the design of compact and low power UVLO and TSD circuits. The post-layout simulation results using a 0.18 µm BCD-on-SOI technology prove the attractive performance of the UVLO and TSD with a static current (I<sub>Q</sub>) of 7.76 µA and 5.4 µA from a 5 V supply, respectively. The deviations of UVLO thresholds are less than 3 mV in the temperature range of -40~85 °C.

scholarly journals A High-Accuracy Ultra-Low-Power Offset-Cancelation On-Off Bandgap Reference for Implantable Medical Electronics

Electronics ◽  
2019 ◽  
Vol 8 (7) ◽  
pp. 814 ◽  
Author(s):  
Jiangtao Xu ◽  
Yawei Wang ◽  
Minshun Wu ◽  
Ruizhi Zhang ◽  
Sufen Wei ◽  
...  
Keyword(s):  
Low Power ◽  
Supply Voltage ◽  
Sampling Strategy ◽  
High Accuracy ◽  
Cmos Process ◽  
Medical Electronics ◽  
Bandgap Reference ◽  
Ultra Low Power ◽  
Voltage Range ◽  
Average Current

An ultra-low-power and high-accuracy on-off bandgap reference (BGR) is demonstrated in this paper for implantable medical electronics. The proposed BGR shows an average current consumption of 78 nA under 2.8 V supply and an output voltage of 1.17 V with an untrimmed accuracy of 0.69%. The on-off bandgap combined with sample-and-hold switched-RC filter is developed to reduce power consumption and noise. The on-off mechanism allows a relatively higher current in the sample phase to alleviate the process variation of bipolar transistors. To compensate the error caused by operational amplifier offset, the correlated double sampling strategy is adopted in the BGR. The proposed BGR is implemented in 0.35 μm standard CMOS process and occupies a total area of 0.063 mm2. Measurement results show that the circuit works properly in the supply voltage range of 1.8–3.2 V and achieves a line regulation of 0.59 mV/V. When the temperature varies from −20 to 80 °C, an average temperature coefficient of 19.6 ppm/°C is achieved.

A New 1,000 kV Electron Microscope

1967 ◽  
Vol 25 ◽  
pp. 260-261
Author(s):  
M. Nishigaki ◽  
S. Katagiri ◽  
H. Kimura ◽  
B. Tadano
Keyword(s):  
Electron Microscope ◽  
High Voltage ◽  
Basic Research ◽  
Chromatic Aberration ◽  
High Accuracy ◽  
Biological Specimen ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron

The high voltage electron microscope has many advantageous features in comparison with the ordinary electron microscope. They are a higher penetrating efficiency of the electron, low chromatic aberration, high accuracy of the selected area diffraction and so on. Thus, the high voltage electron microscope becomes an indispensable instrument for the metallurgical, polymer and biological specimen studies. The application of the instrument involves today not only basic research but routine survey in the various fields. Particularly for the latter purpose, the performance, maintenance and reliability of the microscope should be same as those of commercial ones. The authors completed a 500 kV electron microscope in 1964 and a 1,000 kV one in 1966 taking these points into consideration. The construction of our 1,000 kV electron microscope is described below.

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