High voltage high mobility low leakage current CVD-polycrystalline based, thin film transistor using conventional processing

1987 ◽  
Author(s):  
R.E. Proano ◽  
R.J. Soave ◽  
D.G. Ast
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
High Voltage ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Low Leakage ◽  
Low Leakage Current

High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

2021 ◽  
pp. 106413
Author(s):  
Yuexin Yang ◽  
Zhuohui Xu ◽  
Tian Qiu ◽  
Honglong Ning ◽  
Jinyao Zhong ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K

A low-leakage-current CdSe thin film transistor

1981 ◽  
Vol 24 (5) ◽  
pp. 461-465 ◽  
Author(s):  
F.C. Luo ◽  
D.D. Hoesly ◽  
I. Chen
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Cdse Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications

RSC Advances ◽  
2014 ◽  
Vol 4 (36) ◽  
pp. 18493-18502 ◽  
Author(s):  
Jagan Singh Meena ◽  
Min-Ching Chu ◽  
Ranjodh Singh ◽  
Chung-Shu Wu ◽  
Umesh Chand ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Gate Dielectric ◽  
High Surface ◽  
Thin Film Transistor ◽  
Plastic Substrate ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High Surface Energy ◽  
Low Temperature Process

Low-temperature process PS-b-PMMA composite film as gate dielectric deposited over plastic substrate, which exhibits high surface energy, high air stability, very low leakage current and better dielectric constant compared to their conventional polymer dielectrics for use in ZnO–TFT applications.

REDUCED LEAKAGE CURRENT AND ENHANCED MAGNETIC PROPERTIES OF (Bi,Nd)FeO3 THIN FILMS GROWN ON (Ba,Sr)TiO3 BOTTOM LAYER

2012 ◽  
Vol 05 (03) ◽  
pp. 1250032 ◽  
Author(s):  
C. B. MA ◽  
X. G. TANG ◽  
D. G. CHEN ◽  
Q. X. LIU ◽  
Y. P. JIANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Coupling Reaction ◽  
Bottom Layer ◽  
Rf Magnetron Sputtering ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Multiferroic Heterostructure

A multiferroic heterostructure composed of ( Bi 0.875 Nd 0.125) FeO 3 (BNF) are grown on ( Ba 0.65 Sr 0.35) TiO 3(BST) buffered Pt/Ti/SiO2/Si(100) substrate by rf-magnetron sputtering. The heterostructure BNF/BST exhibits a quite low leakage current (3.7 × 10-7 A/cm2 at 300 kV/cm) and dielectric loss (0.0036 at 100 kHz) at room temperature. The saturated magnetization and the coercive field of the BST/BNF heterostructure are 37.7 emu/cm3 and 357.6 Oe, respectively. The low leakage current owed to the action of BST in the charge transfer between BNF and the bottom electrode, the coupling reaction between BST and BNF films. And the better crystallization in BNF/BST heterostructure thin film lead to the ferromagnetic properties enhanced.

Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O9–Bi3TiTaO9 solid solution thin film

2001 ◽  
Vol 79 (13) ◽  
pp. 2067-2069 ◽  
Author(s):  
Masatoshi Mitsuya ◽  
Norimasa Nukaga ◽  
Takayuki Watanabe ◽  
Hiroshi Funakubo ◽  
Keisuke Saito ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Low Leakage ◽  
Low Leakage Current
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