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SiGe BiCMOS Technology with 3.0 ps Gate Delay
2007 IEEE International Electron Devices Meeting
◽
10.1109/iedm.2007.4419028
◽
2007
◽
Cited By ~ 14
Author(s):
H. Rucker
◽
O. Fursenko
◽
T. Grabolla
◽
U. Haak
◽
W. Hoppner
◽
...
Keyword(s):
Gate Delay
◽
Bicmos Technology
◽
Sige Bicmos
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Cited By
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Operation of Current Mirrors in SiGe BiCMOS Technology at Cryogenic Temperatures
IEEE Transactions on Electron Devices
◽
10.1109/ted.2021.3059990
◽
2021
◽
Vol 68
(4)
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pp. 1439-1445
Author(s):
Hanbin Ying
◽
Jeffrey W. Teng
◽
John D. Cressler
Keyword(s):
Cryogenic Temperatures
◽
Current Mirrors
◽
Bicmos Technology
◽
Sige Bicmos
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A 120 GS/s 2:1 Analog Multiplexer with High Linearity in SiGe-BiCMOS Technology
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
◽
10.1109/bcicts48439.2020.9392970
◽
2020
◽
Author(s):
Michael Collisi
◽
Michael Moller
Keyword(s):
High Linearity
◽
Bicmos Technology
◽
Sige Bicmos
◽
Analog Multiplexer
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A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
◽
10.1109/sirf51851.2021.9383328
◽
2021
◽
Author(s):
Sascha Breun
◽
Albert-Marcel Schrotz
◽
Marco Dietz
◽
Vadim Issakov
◽
Robert Weigel
Keyword(s):
Frequency Doubler
◽
Bicmos Technology
◽
Sige Bicmos
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Fully integrated low phase noise VCO design in SiGe BiCMOS technology
Proceedings RAWCON 2001. 2001 IEEE Radio and Wireless Conference (Cat.No.01EX514)
◽
10.1109/rawcon.2001.947544
◽
2002
◽
Cited By ~ 3
Author(s):
Xudong Wang
◽
D. Wang
◽
K. Schelkle
◽
P. Bacon
Keyword(s):
Phase Noise
◽
Fully Integrated
◽
Bicmos Technology
◽
Sige Bicmos
◽
Low Phase Noise
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Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology
2012 IEEE Radiation Effects Data Workshop
◽
10.1109/redw.2012.6353734
◽
2012
◽
Cited By ~ 19
Author(s):
Nelson E. Lourenco
◽
Robert L. Schmid
◽
Kurt A. Moen
◽
Stanley D. Phillips
◽
Troy D. England
◽
...
Keyword(s):
Total Dose
◽
Transient Response
◽
Bicmos Technology
◽
Sige Bicmos
Download Full-text
Analysis and Design of Low Power Wideband Programmable Frequency Divider in 0.13-μm SiGe BiCMOS Technology
AEU - International Journal of Electronics and Communications
◽
10.1016/j.aeue.2021.153879
◽
2021
◽
pp. 153879
Author(s):
Guoxiao Cheng
◽
Zhiqun Li
◽
Wen Wu
Keyword(s):
Low Power
◽
Frequency Divider
◽
Analysis And Design
◽
Bicmos Technology
◽
Sige Bicmos
◽
Programmable Frequency Divider
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Characteristics of SiGe device fabricated by SiGe BiCMOS technology and its application to a 5.8 GHz mmic down-conversion mixer
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.
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10.1109/bipol.2005.1555239
◽
2005
◽
Author(s):
Sang-Heung Lee
◽
Ja-Yol Lee
◽
Sang-Hoon Kim
◽
Hyun-Cheol Bae
◽
Seung-Yun Lee
◽
...
Keyword(s):
Bicmos Technology
◽
Sige Bicmos
◽
Down Conversion
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SiGe BiCMOS technology for highly integrated wireless transceivers
25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003.
◽
10.1109/gaas.2003.1252390
◽
2003
◽
Cited By ~ 14
Author(s):
M. Racanelli
◽
Pingxi Ma
◽
P. Kempf
Keyword(s):
Wireless Transceivers
◽
Bicmos Technology
◽
Sige Bicmos
Download Full-text
0.18 μm SiGe BiCMOS technology for wireless and 40 Gb/s communication products
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212)
◽
10.1109/bipol.2001.957878
◽
2002
◽
Cited By ~ 5
Author(s):
K. Schuegraf
◽
M. Racanelli
◽
A. Kalburge
◽
B. Shen
◽
Chun Hu
◽
...
Keyword(s):
Bicmos Technology
◽
Sige Bicmos
Download Full-text
A micromachined double-dipole antenna for 122 – 140 GHz applications based on a SiGe BiCMOS technology
2012 IEEE/MTT-S International Microwave Symposium Digest
◽
10.1109/mwsym.2012.6258421
◽
2012
◽
Cited By ~ 2
Author(s):
Ruoyu Wang
◽
Yaoming Sun
◽
Mehmet Kaynak
◽
Stefan Beer
◽
Johannes Borngraber
◽
...
Keyword(s):
Dipole Antenna
◽
Bicmos Technology
◽
Sige Bicmos
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