Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application

Author(s):  
H. Y. Cheng ◽  
M. BrightSky ◽  
S. Raoux ◽  
C. F. Chen ◽  
P. Y. Du ◽  
...  
2018 ◽  
Vol 49 (6) ◽  
pp. 509-528 ◽  
Author(s):  
Orawan Aumporn ◽  
Belkacem Zeghmati ◽  
Xavier Chesneau ◽  
Serm Janjai

2018 ◽  
Author(s):  
Ryohei Gotoh ◽  
Tsuyoshi Totani ◽  
Masashi Wakita ◽  
Harunori Nagata

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